Femtosecond laser-induced forward transfer for the deposition of nanoscale transparent and solid-phase materials
Femtosecond laser-induced forward transfer for the deposition of nanoscale transparent and solid-phase materials
The Laser-Induced Forward Transfer (LIFT) technique [1] exists as a simple method for the direct-writing of a wide range of materials with sub-micron to 100s of microns feature sizes. A thin film of the material to be deposited (the donor) is coated onto one face of a transparent carrier substrate and transferred to another substrate (the receiver) placed some microns away by irradiating the carrier-donor interface through the carrier with a CW or pulsed laser. The process is inherently thermal in nature, with melting and ablation of the donor required to provide the necessary thrust for transferring material. Hence, the technique is not readily applied to the deposition of thermo-sensitive materials.
Banks, D.P.
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Kaur, K.S.
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Grivas, C.
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Sones, C.L.
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Gangopadhyay, P.
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Ying, C.Y.J.
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Mills, J.D.
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Mailis, S.
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Zergioti, I.
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Fardel, R.
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Nagel, M.
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Lippert, T.
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Xu, X.
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Banks, S.P.
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Eason, R.W.
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29 June 2009
Banks, D.P.
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Kaur, K.S.
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Grivas, C.
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Sones, C.L.
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Gangopadhyay, P.
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Ying, C.Y.J.
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Mills, J.D.
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Mailis, S.
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Zergioti, I.
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Fardel, R.
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Nagel, M.
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Lippert, T.
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Xu, X.
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Banks, S.P.
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Eason, R.W.
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Banks, D.P., Kaur, K.S., Grivas, C., Sones, C.L., Gangopadhyay, P., Ying, C.Y.J., Mills, J.D., Mailis, S., Zergioti, I., Fardel, R., Nagel, M., Lippert, T., Xu, X., Banks, S.P. and Eason, R.W.
(2009)
Femtosecond laser-induced forward transfer for the deposition of nanoscale transparent and solid-phase materials.
5th International Congress on Laser Advanced Materials Processing (LAMP 2009), Kobe, Japan, Kobe, Japan.
29 Jun - 02 Jul 2009.
1 pp
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
The Laser-Induced Forward Transfer (LIFT) technique [1] exists as a simple method for the direct-writing of a wide range of materials with sub-micron to 100s of microns feature sizes. A thin film of the material to be deposited (the donor) is coated onto one face of a transparent carrier substrate and transferred to another substrate (the receiver) placed some microns away by irradiating the carrier-donor interface through the carrier with a CW or pulsed laser. The process is inherently thermal in nature, with melting and ablation of the donor required to provide the necessary thrust for transferring material. Hence, the technique is not readily applied to the deposition of thermo-sensitive materials.
Text
4273
- Accepted Manuscript
More information
e-pub ahead of print date: 29 June 2009
Published date: 29 June 2009
Venue - Dates:
5th International Congress on Laser Advanced Materials Processing (LAMP 2009), Kobe, Japan, Kobe, Japan, 2009-06-29 - 2009-07-02
Identifiers
Local EPrints ID: 76264
URI: http://eprints.soton.ac.uk/id/eprint/76264
PURE UUID: 93f41cc7-cd85-48bc-a290-df9e8c095ff4
Catalogue record
Date deposited: 16 Mar 2010
Last modified: 14 Mar 2024 02:33
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Contributors
Author:
D.P. Banks
Author:
K.S. Kaur
Author:
C. Grivas
Author:
C.L. Sones
Author:
P. Gangopadhyay
Author:
C.Y.J. Ying
Author:
S. Mailis
Author:
I. Zergioti
Author:
R. Fardel
Author:
M. Nagel
Author:
T. Lippert
Author:
X. Xu
Author:
S.P. Banks
Author:
R.W. Eason
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