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Femtosecond laser-induced forward transfer for the deposition of nanoscale transparent and solid-phase materials

Femtosecond laser-induced forward transfer for the deposition of nanoscale transparent and solid-phase materials
Femtosecond laser-induced forward transfer for the deposition of nanoscale transparent and solid-phase materials
The Laser-Induced Forward Transfer (LIFT) technique [1] exists as a simple method for the direct-writing of a wide range of materials with sub-micron to 100s of microns feature sizes. A thin film of the material to be deposited (the donor) is coated onto one face of a transparent carrier substrate and transferred to another substrate (the receiver) placed some microns away by irradiating the carrier-donor interface through the carrier with a CW or pulsed laser. The process is inherently thermal in nature, with melting and ablation of the donor required to provide the necessary thrust for transferring material. Hence, the technique is not readily applied to the deposition of thermo-sensitive materials.
Banks, D.P.
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Kaur, K.S.
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Grivas, C.
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Sones, C.L.
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Gangopadhyay, P.
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Ying, C.
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Mills, J.D.
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Mailis, S.
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Zergioti, I.
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Fardel, R.
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Nagel, M.
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Lippert, T.
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Xu, X.
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Banks, S.P.
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Eason, R.W.
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Banks, D.P.
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Kaur, K.S.
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Grivas, C.
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Sones, C.L.
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Gangopadhyay, P.
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Ying, C.
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Mills, J.D.
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Mailis, S.
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Zergioti, I.
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Fardel, R.
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Nagel, M.
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Lippert, T.
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Xu, X.
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Banks, S.P.
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Eason, R.W.
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Banks, D.P., Kaur, K.S., Grivas, C., Sones, C.L., Gangopadhyay, P., Ying, C., Mills, J.D., Mailis, S., Zergioti, I., Fardel, R., Nagel, M., Lippert, T., Xu, X., Banks, S.P. and Eason, R.W. (2009) Femtosecond laser-induced forward transfer for the deposition of nanoscale transparent and solid-phase materials. 5th International Congress on Laser Advanced Materials Processing (LAMP 2009), Kobe, Japan. 29 Jun - 02 Jul 2009. 1 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

The Laser-Induced Forward Transfer (LIFT) technique [1] exists as a simple method for the direct-writing of a wide range of materials with sub-micron to 100s of microns feature sizes. A thin film of the material to be deposited (the donor) is coated onto one face of a transparent carrier substrate and transferred to another substrate (the receiver) placed some microns away by irradiating the carrier-donor interface through the carrier with a CW or pulsed laser. The process is inherently thermal in nature, with melting and ablation of the donor required to provide the necessary thrust for transferring material. Hence, the technique is not readily applied to the deposition of thermo-sensitive materials.

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More information

e-pub ahead of print date: 29 June 2009
Published date: 29 June 2009
Venue - Dates: 5th International Congress on Laser Advanced Materials Processing (LAMP 2009), Kobe, Japan, 2009-06-29 - 2009-07-02

Identifiers

Local EPrints ID: 76264
URI: https://eprints.soton.ac.uk/id/eprint/76264
PURE UUID: 93f41cc7-cd85-48bc-a290-df9e8c095ff4
ORCID for S. Mailis: ORCID iD orcid.org/0000-0001-8100-2670
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

Catalogue record

Date deposited: 16 Mar 2010
Last modified: 12 Jan 2019 01:38

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