Influence of pure silica OH content on femtosecond laser processing
Influence of pure silica OH content on femtosecond laser processing
The infrared femtosecond laser damage threshold is found to be independent of OH content in pure silica glass. Additionally, the density and the mean trapping time of electrons excited in the conduction band are also found to be independent on OH concentration.
Lancry, M.
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Groothoff, N.
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Guizard, S.
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Yang, W.
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Poumellec, B.
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Kazansky, P.G.
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Canning, J.
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30 June 2008
Lancry, M.
8cd458c2-f2bd-4fc3-8dca-49c430741278
Groothoff, N.
3fd13177-c6d8-4876-b392-72561814113e
Guizard, S.
f6dce553-c7b0-4313-ba83-08c2b6e68a2e
Yang, W.
8d99a175-3cc8-44bc-99c2-cf431ae9a4ea
Poumellec, B.
852a9506-af6c-4671-9e91-e2567fc17ab6
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Canning, J.
6481aeed-b29e-41ec-bea6-3bfee957a74c
Lancry, M., Groothoff, N., Guizard, S., Yang, W., Poumellec, B., Kazansky, P.G. and Canning, J.
(2008)
Influence of pure silica OH content on femtosecond laser processing.
7th Symposium on ~SiO2 advanced dielectrics and related devices, Saint-Etienne, France.
30 Jun - 02 Jul 2008.
Record type:
Conference or Workshop Item
(Paper)
Abstract
The infrared femtosecond laser damage threshold is found to be independent of OH content in pure silica glass. Additionally, the density and the mean trapping time of electrons excited in the conduction band are also found to be independent on OH concentration.
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Published date: 30 June 2008
Venue - Dates:
7th Symposium on ~SiO2 advanced dielectrics and related devices, Saint-Etienne, France, 2008-06-30 - 2008-07-02
Identifiers
Local EPrints ID: 76321
URI: http://eprints.soton.ac.uk/id/eprint/76321
PURE UUID: 1d0a3a3a-3686-4d4d-b079-fe10408ff256
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Date deposited: 23 Mar 2010
Last modified: 06 Feb 2023 17:54
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Contributors
Author:
M. Lancry
Author:
N. Groothoff
Author:
S. Guizard
Author:
W. Yang
Author:
B. Poumellec
Author:
P.G. Kazansky
Author:
J. Canning
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