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Germanium antimony amorphous thin films for phase-change memory applications by chemical vapour deposition

Germanium antimony amorphous thin films for phase-change memory applications by chemical vapour deposition
Germanium antimony amorphous thin films for phase-change memory applications by chemical vapour deposition
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Knight, Kenton
7f4a1bf9-9bb2-4cab-b8f8-55696f58884b
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Knight, Kenton
7f4a1bf9-9bb2-4cab-b8f8-55696f58884b
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0

Huang, Chung-Che, Knight, Kenton and Hewak, Daniel (2006) Germanium antimony amorphous thin films for phase-change memory applications by chemical vapour deposition. 1st Joint Innovative Mass-Storage Technologies & European\Phase Change and Ovonics Symposium - IMST/E-PCOS, Grenoble. 28 - 30 May 2006.

Record type: Conference or Workshop Item (Paper)

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More information

Published date: May 2006
Venue - Dates: 1st Joint Innovative Mass-Storage Technologies & European\Phase Change and Ovonics Symposium - IMST/E-PCOS, Grenoble, 2006-05-28 - 2006-05-30
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 76393
URI: http://eprints.soton.ac.uk/id/eprint/76393
PURE UUID: 6760daea-3f71-43bc-9a8f-a10ad680fc45
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 11 Mar 2010
Last modified: 11 Dec 2021 04:05

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Contributors

Author: Chung-Che Huang ORCID iD
Author: Kenton Knight
Author: Daniel Hewak ORCID iD

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