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Confining metallic gallium - new material structure for optical data processing at milliwatt power level

Confining metallic gallium - new material structure for optical data processing at milliwatt power level
Confining metallic gallium - new material structure for optical data processing at milliwatt power level
We report the application of a recently discovered huge optical nonlinearity of gallium/dielectric interface in controlling light with light. The nonlinearity is associated with a light-induced, reversible and very fast structural phase transition between solid alpha-gallium and metastable phase of much higher reflectivity. The material is fully compatible with existing telecom fiber technology as the gallium structure can be manufactured on the tip of an optical fiber or can form a wall of a planar optical waveguide. It and can be used with lasers operating anywhere from 400nm to 1.7mkm. We have demonstrated a fully fiberized high contrast all-optical gate based on this material which operates at only a few milliwatts of light power. The gate performance has been characterized with diode lasers operating at telecom wavelengths of 155mkm, 1.3mkm and 670nm
The gate is suitable for analog and digital applications and shows useful modulation at frequencies up to 1MHz. The gate can also handle optical pulses as short as 10ns Applications of the new material structure for optical routing, in particular in the WDM technology optical bistability optical data storage, power limiting and controllable power attenuation are discussed
Our demonstrations have shown that photonic devices based on gallium interfaces can be comparable to conventional silicon transistors in terms of speed versus energy consumption.
Albanis, Vassilios
93793f17-0f6b-4f07-b126-4623f2091304
Petropoulos, Periklis
522b02cc-9f3f-468e-bca5-e9f58cc9cad7
Dhanjal, Sukhminder
d5c0d159-da43-47c4-b71e-051f88cf84b1
Richardson, David J.
ebfe1ff9-d0c2-4e52-b7ae-c1b13bccdef3
Zheludev, Nikolay
32fb6af7-97e4-4d11-bca6-805745e40cc6
Albanis, Vassilios
93793f17-0f6b-4f07-b126-4623f2091304
Petropoulos, Periklis
522b02cc-9f3f-468e-bca5-e9f58cc9cad7
Dhanjal, Sukhminder
d5c0d159-da43-47c4-b71e-051f88cf84b1
Richardson, David J.
ebfe1ff9-d0c2-4e52-b7ae-c1b13bccdef3
Zheludev, Nikolay
32fb6af7-97e4-4d11-bca6-805745e40cc6

Albanis, Vassilios, Petropoulos, Periklis, Dhanjal, Sukhminder, Richardson, David J. and Zheludev, Nikolay (1998) Confining metallic gallium - new material structure for optical data processing at milliwatt power level. Materials Research Society Fall Meeting, United States. 30 Nov - 04 Dec 1998.

Record type: Conference or Workshop Item (Paper)

Abstract

We report the application of a recently discovered huge optical nonlinearity of gallium/dielectric interface in controlling light with light. The nonlinearity is associated with a light-induced, reversible and very fast structural phase transition between solid alpha-gallium and metastable phase of much higher reflectivity. The material is fully compatible with existing telecom fiber technology as the gallium structure can be manufactured on the tip of an optical fiber or can form a wall of a planar optical waveguide. It and can be used with lasers operating anywhere from 400nm to 1.7mkm. We have demonstrated a fully fiberized high contrast all-optical gate based on this material which operates at only a few milliwatts of light power. The gate performance has been characterized with diode lasers operating at telecom wavelengths of 155mkm, 1.3mkm and 670nm
The gate is suitable for analog and digital applications and shows useful modulation at frequencies up to 1MHz. The gate can also handle optical pulses as short as 10ns Applications of the new material structure for optical routing, in particular in the WDM technology optical bistability optical data storage, power limiting and controllable power attenuation are discussed
Our demonstrations have shown that photonic devices based on gallium interfaces can be comparable to conventional silicon transistors in terms of speed versus energy consumption.

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Published date: October 1998
Venue - Dates: Materials Research Society Fall Meeting, United States, 1998-11-30 - 1998-12-04

Identifiers

Local EPrints ID: 76603
URI: https://eprints.soton.ac.uk/id/eprint/76603
PURE UUID: 3cccca68-b23b-416c-898f-968a8cf73f2c
ORCID for Periklis Petropoulos: ORCID iD orcid.org/0000-0002-1576-8034
ORCID for David J. Richardson: ORCID iD orcid.org/0000-0002-7751-1058
ORCID for Nikolay Zheludev: ORCID iD orcid.org/0000-0002-1013-6636

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Date deposited: 11 Mar 2010
Last modified: 06 Mar 2019 01:37

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