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Study of Ti:sapphire layers created by PLD

Jelínek, M., Eason, R.W., Lančok, J., Anderson, A.A., Grivas, C., Fotakis, C., Jastrabík, L. and Flory, F.B. (1996) Study of Ti:sapphire layers created by PLD In, Deng, Shu-Sen and Wang, S.C. (eds.) Laser Processing of Materials and Industrial Applications. Bellingham, US, The International Society for Optical Engineering pp. 51-59. (Proceedings of SPIE, 2888). (doi:10.1117/12.253103).

Record type: Book Section


Thin films of Ti:sapphire were fabricated by KrF laser ablation on (0001) and (1102) sapphire, on (001) quartz and on fused silica substrates from crystalline Ti:saphire targets (0,12 wt% and 0,453 wt%)). Substrates were heated during the deposition at low temperatures (500°C - 600°C) or at high temperatures (1000°C - 1390°C). Films luminescence, crystallinity, fluorescence lifetime, dopants content, waveguiding and surface morphology of created Ti:sapphire films were studied. Results are presented and discussed.

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Published date: 1996
Venue - Dates: Laser Processing of Materials and Industrial Applications, China, 1996-01-01


Local EPrints ID: 76857
PURE UUID: b814e8f8-7363-487f-962e-526b8109ad9c
ORCID for R.W. Eason: ORCID iD

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Date deposited: 11 Mar 2010
Last modified: 18 Jul 2017 23:37

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Author: M. Jelínek
Author: R.W. Eason ORCID iD
Author: J. Lančok
Author: A.A. Anderson
Author: C. Grivas
Author: C. Fotakis
Author: L. Jastrabík
Author: F.B. Flory
Editor: Shu-Sen Deng
Editor: S.C. Wang

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