Study of Ti:sapphire layers created by PLD

Jelínek, M., Eason, R.W., Lančok, J., Anderson, A.A., Grivas, C., Fotakis, C., Jastrabík, L. and Flory, F.B. (1996) Study of Ti:sapphire layers created by PLD In, Deng, Shu-Sen and Wang, S.C. (eds.) Laser Processing of Materials and Industrial Applications. Bellingham, US, The International Society for Optical Engineering pp. 51-59. (Proceedings of SPIE, 2888). (doi:10.1117/12.253103).


Full text not available from this repository.


Thin films of Ti:sapphire were fabricated by KrF laser ablation on (0001) and (1102) sapphire, on (001) quartz and on fused silica substrates from crystalline Ti:saphire targets (0,12 wt% and 0,453 wt%)). Substrates were heated during the deposition at low temperatures (500°C - 600°C) or at high temperatures (1000°C - 1390°C). Films luminescence, crystallinity, fluorescence lifetime, dopants content, waveguiding and surface morphology of created Ti:sapphire films were studied. Results are presented and discussed.

Item Type: Book Section
Digital Object Identifier (DOI): doi:10.1117/12.253103
Venue - Dates: Laser Processing of Materials and Industrial Applications, China, 1996-01-01
Related URLs:
ePrint ID: 76857
Date :
Date Event
Date Deposited: 11 Mar 2010
Last Modified: 18 Apr 2017 20:36
Further Information:Google Scholar

Actions (login required)

View Item View Item