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Study of Ti:sapphire layers created by PLD

Study of Ti:sapphire layers created by PLD
Study of Ti:sapphire layers created by PLD
Thin films of Ti:sapphire were fabricated by KrF laser ablation on (0001) and (1102) sapphire, on (001) quartz and on fused silica substrates from crystalline Ti:saphire targets (0,12 wt% and 0,453 wt%)). Substrates were heated during the deposition at low temperatures (500°C - 600°C) or at high temperatures (1000°C - 1390°C). Films luminescence, crystallinity, fluorescence lifetime, dopants content, waveguiding and surface morphology of created Ti:sapphire films were studied. Results are presented and discussed.
51-59
The International Society for Optical Engineering
Jelínek, M.
058ae7ba-cd86-4f99-990e-2e8f78cd4484
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Lančok, J.
d5b8205a-97c8-439f-8178-aa82d5a9d479
Anderson, A.A.
646395a3-662e-4ad2-9a45-50ec63847687
Grivas, C.
7f564818-0ac0-4127-82a7-22e87ac35f1a
Fotakis, C.
51429efa-20ae-4c9d-a8c3-954431cf8182
Jastrabík, L.
2e81d419-d4db-4b47-aec1-59b907c3e109
Flory, F.B.
55a482b6-1fd4-45c7-840d-8076ef055869
Deng, Shu-Sen
Wang, S.C.
Jelínek, M.
058ae7ba-cd86-4f99-990e-2e8f78cd4484
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Lančok, J.
d5b8205a-97c8-439f-8178-aa82d5a9d479
Anderson, A.A.
646395a3-662e-4ad2-9a45-50ec63847687
Grivas, C.
7f564818-0ac0-4127-82a7-22e87ac35f1a
Fotakis, C.
51429efa-20ae-4c9d-a8c3-954431cf8182
Jastrabík, L.
2e81d419-d4db-4b47-aec1-59b907c3e109
Flory, F.B.
55a482b6-1fd4-45c7-840d-8076ef055869
Deng, Shu-Sen
Wang, S.C.

Jelínek, M., Eason, R.W., Lančok, J., Anderson, A.A., Grivas, C., Fotakis, C., Jastrabík, L. and Flory, F.B. (1996) Study of Ti:sapphire layers created by PLD. In, Deng, Shu-Sen and Wang, S.C. (eds.) Laser Processing of Materials and Industrial Applications. (Proceedings of SPIE, , (doi:10.1117/12.253103), 2888) Laser Processing of Materials and Industrial Applications (01/01/96) Bellingham, US. The International Society for Optical Engineering, pp. 51-59. (doi:10.1117/12.253103).

Record type: Book Section

Abstract

Thin films of Ti:sapphire were fabricated by KrF laser ablation on (0001) and (1102) sapphire, on (001) quartz and on fused silica substrates from crystalline Ti:saphire targets (0,12 wt% and 0,453 wt%)). Substrates were heated during the deposition at low temperatures (500°C - 600°C) or at high temperatures (1000°C - 1390°C). Films luminescence, crystallinity, fluorescence lifetime, dopants content, waveguiding and surface morphology of created Ti:sapphire films were studied. Results are presented and discussed.

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More information

Published date: 1996
Venue - Dates: Laser Processing of Materials and Industrial Applications, China, 1996-01-01

Identifiers

Local EPrints ID: 76857
URI: https://eprints.soton.ac.uk/id/eprint/76857
PURE UUID: b814e8f8-7363-487f-962e-526b8109ad9c
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

Catalogue record

Date deposited: 11 Mar 2010
Last modified: 12 Nov 2019 02:04

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