Jelínek, M., Eason, R.W., Lančok, J., Anderson, A.A., Grivas, C., Fotakis, C., Jastrabík, L. and Flory, F.B.
Study of Ti:sapphire layers created by PLD
Deng, Shu-Sen and Wang, S.C. (eds.)
Laser Processing of Materials and Industrial Applications.
The International Society for Optical Engineering
(Proceedings of SPIE, 2888).
Full text not available from this repository.
Thin films of Ti:sapphire were fabricated by KrF laser ablation on (0001) and (1102) sapphire, on (001) quartz and on fused silica substrates from crystalline Ti:saphire targets (0,12 wt% and 0,453 wt%)). Substrates were heated during the deposition at low temperatures (500°C - 600°C) or at high temperatures (1000°C - 1390°C). Films luminescence, crystallinity, fluorescence lifetime, dopants content, waveguiding and surface morphology of created Ti:sapphire films were studied. Results are presented and discussed.
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