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Thermal diffusion of Ti3+ into sapphire for active integrated optical devices

Record type: Conference or Workshop Item (Paper)

Thermal diffusion of Ti3+ into sapphire is demonstrated, with depths in excess of 50µm observed after 8 hours annealing at 1950°C. Appropriate fabrication conditions for the future development of active integrated optical devices are identified

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Citation

Hickey, L.M.B., Román, J.E., Wilkinson, J.S., Moya, E.G. and Moya, F. (1996) Thermal diffusion of Ti3+ into sapphire for active integrated optical devices At International Quantum Electronics Conference International Conference on Quantum Electronics (IQEC '96), Australia. 14 - 19 Jul 1996.

More information

Published date: 1996
Venue - Dates: International Quantum Electronics Conference International Conference on Quantum Electronics (IQEC '96), Australia, 1996-07-14 - 1996-07-19

Identifiers

Local EPrints ID: 76884
URI: http://eprints.soton.ac.uk/id/eprint/76884
PURE UUID: bb7da71f-83a5-4972-81bd-355b62c14c30

Catalogue record

Date deposited: 11 Mar 2010
Last modified: 18 Jul 2017 23:36

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Contributors

Author: L.M.B. Hickey
Author: J.E. Román
Author: J.S. Wilkinson
Author: E.G. Moya
Author: F. Moya

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