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Thermal diffusion of Ti3+ into sapphire for active integrated optical devices

Thermal diffusion of Ti3+ into sapphire for active integrated optical devices
Thermal diffusion of Ti3+ into sapphire for active integrated optical devices
Thermal diffusion of Ti3+ into sapphire is demonstrated, with depths in excess of 50µm observed after 8 hours annealing at 1950°C. Appropriate fabrication conditions for the future development of active integrated optical devices are identified.
Hickey, L.M.B.
8879d8f5-f865-4099-8867-8ab9097ae74e
Román, J.E.
33f9c6e7-9fb1-43fe-9253-e15b170951dc
Wilkinson, J.S.
73483cf3-d9f2-4688-9b09-1c84257884ca
Moya, E.G.
431a128f-5314-4d06-b83e-660407260744
Moya, F.
4226ddf5-fffa-4797-8863-bf6105ea37c9
Hickey, L.M.B.
8879d8f5-f865-4099-8867-8ab9097ae74e
Román, J.E.
33f9c6e7-9fb1-43fe-9253-e15b170951dc
Wilkinson, J.S.
73483cf3-d9f2-4688-9b09-1c84257884ca
Moya, E.G.
431a128f-5314-4d06-b83e-660407260744
Moya, F.
4226ddf5-fffa-4797-8863-bf6105ea37c9

Hickey, L.M.B., Román, J.E., Wilkinson, J.S., Moya, E.G. and Moya, F. (1996) Thermal diffusion of Ti3+ into sapphire for active integrated optical devices. International Quantum Electronics Conference International Conference on Quantum Electronics (IQEC '96), Australia. 14 - 19 Jul 1996.

Record type: Conference or Workshop Item (Paper)

Abstract

Thermal diffusion of Ti3+ into sapphire is demonstrated, with depths in excess of 50µm observed after 8 hours annealing at 1950°C. Appropriate fabrication conditions for the future development of active integrated optical devices are identified.

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Published date: 1996
Venue - Dates: International Quantum Electronics Conference International Conference on Quantum Electronics (IQEC '96), Australia, 1996-07-14 - 1996-07-19

Identifiers

Local EPrints ID: 76884
URI: https://eprints.soton.ac.uk/id/eprint/76884
PURE UUID: bb7da71f-83a5-4972-81bd-355b62c14c30
ORCID for J.S. Wilkinson: ORCID iD orcid.org/0000-0003-4712-1697

Catalogue record

Date deposited: 11 Mar 2010
Last modified: 06 Jun 2018 13:19

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