Thermal diffusion of Ti3+ into sapphire for active integrated optical devices


Hickey, L.M.B., Román, J.E., Wilkinson, J.S., Moya, E.G. and Moya, F. (1996) Thermal diffusion of Ti3+ into sapphire for active integrated optical devices At International Quantum Electronics Conference International Conference on Quantum Electronics (IQEC '96), Australia. 14 - 19 Jul 1996.

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Description/Abstract

Thermal diffusion of Ti3+ into sapphire is demonstrated, with depths in excess of 50µm observed after 8 hours annealing at 1950°C. Appropriate fabrication conditions for the future development of active integrated optical devices are identified

Item Type: Conference or Workshop Item (Paper)
Venue - Dates: International Quantum Electronics Conference International Conference on Quantum Electronics (IQEC '96), Australia, 1996-07-14 - 1996-07-19
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ePrint ID: 76884
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1996Published
Date Deposited: 11 Mar 2010
Last Modified: 18 Apr 2017 20:36
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/76884

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