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Growth by liquid phase epitaxy and low threshold laser oscillation at 2.012µm of a Tm:YAG waveguide laser

Growth by liquid phase epitaxy and low threshold laser oscillation at 2.012µm of a Tm:YAG waveguide laser
Growth by liquid phase epitaxy and low threshold laser oscillation at 2.012µm of a Tm:YAG waveguide laser
We report the growth by liquid phase epitaxy and laser operation at 2.012 micrometers of Tm:YAG planar waveguides with various concentrations (4 to 10 at %), lengths (3,4 mm) and active layer thicknesses (8 to 30 micrometers ). The pumping source was 1 W GaAlAs SDL diode emitting at 785 nm and the cavity consisted of 2 plane mirrors butted to the waveguide endfaces. Initial results have been obtained with a 6% doped, 4 mm long and 14.6 micrometers thick, Tm:YAG epilayer: Thresholds occurred at respectively 60 mW and 300 mW of incident power (48 mW and 136 mW of absorbed power taking in account pump feedback by the output couplers) for output mirrors transmissions of 2% and 12% respectively. Slope efficiencies of 32% and 48% with respect to absorbed power have been achieved with these output transmissions. With Ti:sapphire pumping an using 1.8% output coupling, laser threshold as low as approximately equals 10 mW and slop efficiencies of approximately equals 30% have been obtained in a range of different Tm:YAG waveguides. This performance is comparable to the best results published until now for bulk crystals.
Borel, C.
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Rameix, A.
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Thony, Ph.
e6d48d59-1d28-4892-8d2d-3e09a3a0e217
Ferrand, B.
6d708ea8-722e-4a6c-a7ea-54bc9121f620
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Large, A.C.
712e26d3-4e3b-467f-8f8c-d9e2dbc042b9
Warburton, T.J.
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Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Hanna, D.C.
3da5a5b4-71c2-4441-bb67-21f0d28a187d
Borel, C.
61ff6612-80a5-40e4-83cd-9dd3e978e1af
Rameix, A.
c4b39233-4adc-418d-a765-e091b627b468
Thony, Ph.
e6d48d59-1d28-4892-8d2d-3e09a3a0e217
Ferrand, B.
6d708ea8-722e-4a6c-a7ea-54bc9121f620
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Large, A.C.
712e26d3-4e3b-467f-8f8c-d9e2dbc042b9
Warburton, T.J.
4298ec6d-6b1a-434e-9f8f-fe95102b49a8
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Hanna, D.C.
3da5a5b4-71c2-4441-bb67-21f0d28a187d

Borel, C., Rameix, A., Thony, Ph., Ferrand, B., Shepherd, D.P., Large, A.C., Warburton, T.J., Tropper, A.C. and Hanna, D.C. (1995) Growth by liquid phase epitaxy and low threshold laser oscillation at 2.012µm of a Tm:YAG waveguide laser. Photonics West '95, United States. 04 - 10 Feb 1995. (doi:10.1117/12.206948).

Record type: Conference or Workshop Item (Paper)

Abstract

We report the growth by liquid phase epitaxy and laser operation at 2.012 micrometers of Tm:YAG planar waveguides with various concentrations (4 to 10 at %), lengths (3,4 mm) and active layer thicknesses (8 to 30 micrometers ). The pumping source was 1 W GaAlAs SDL diode emitting at 785 nm and the cavity consisted of 2 plane mirrors butted to the waveguide endfaces. Initial results have been obtained with a 6% doped, 4 mm long and 14.6 micrometers thick, Tm:YAG epilayer: Thresholds occurred at respectively 60 mW and 300 mW of incident power (48 mW and 136 mW of absorbed power taking in account pump feedback by the output couplers) for output mirrors transmissions of 2% and 12% respectively. Slope efficiencies of 32% and 48% with respect to absorbed power have been achieved with these output transmissions. With Ti:sapphire pumping an using 1.8% output coupling, laser threshold as low as approximately equals 10 mW and slop efficiencies of approximately equals 30% have been obtained in a range of different Tm:YAG waveguides. This performance is comparable to the best results published until now for bulk crystals.

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More information

Published date: February 1995
Venue - Dates: Photonics West '95, United States, 1995-02-04 - 1995-02-10

Identifiers

Local EPrints ID: 77064
URI: https://eprints.soton.ac.uk/id/eprint/77064
PURE UUID: e858b1e9-9ceb-4ac3-ba37-6d509b0ea7c4
ORCID for D.P. Shepherd: ORCID iD orcid.org/0000-0002-4561-8184

Catalogue record

Date deposited: 11 Mar 2010
Last modified: 06 Jun 2018 13:12

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