Growth by liquid phase epitaxy and low threshold laser oscillation at 2.012µm of a Tm:YAG waveguide laser


Borel, C., Rameix, A., Thony, Ph., Ferrand, B., Shepherd, D.P., Large, A.C., Warburton, T.J., Tropper, A.C. and Hanna, D.C. (1995) Growth by liquid phase epitaxy and low threshold laser oscillation at 2.012µm of a Tm:YAG waveguide laser At Photonics West '95, United States. 04 - 10 Feb 1995. (doi:10.1117/12.206948).

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Description/Abstract

We report the growth by liquid phase epitaxy and laser operation at 2.012 micrometers of Tm:YAG planar waveguides with various concentrations (4 to 10 at %), lengths (3,4 mm) and active layer thicknesses (8 to 30 micrometers ). The pumping source was 1 W GaAlAs SDL diode emitting at 785 nm and the cavity consisted of 2 plane mirrors butted to the waveguide endfaces. Initial results have been obtained with a 6% doped, 4 mm long and 14.6 micrometers thick, Tm:YAG epilayer: Thresholds occurred at respectively 60 mW and 300 mW of incident power (48 mW and 136 mW of absorbed power taking in account pump feedback by the output couplers) for output mirrors transmissions of 2% and 12% respectively. Slope efficiencies of 32% and 48% with respect to absorbed power have been achieved with these output transmissions. With Ti:sapphire pumping an using 1.8% output coupling, laser threshold as low as approximately equals 10 mW and slop efficiencies of approximately equals 30% have been obtained in a range of different Tm:YAG waveguides. This performance is comparable to the best results published until now for bulk crystals.

Item Type: Conference or Workshop Item (Paper)
Digital Object Identifier (DOI): doi:10.1117/12.206948
Venue - Dates: Photonics West '95, United States, 1995-02-04 - 1995-02-10
Subjects:
ePrint ID: 77064
Date :
Date Event
February 1995Published
Date Deposited: 11 Mar 2010
Last Modified: 18 Apr 2017 20:34
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/77064

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