The effect of visible and near infrared illumination on the mid infrared transmission of silicon and germanium


Rutt, Harvey N. (1994) The effect of visible and near infrared illumination on the mid infrared transmission of silicon and germanium At SPIE International Symposium on Optics Imaging and Instrumentation, United States. 24 - 29 Jul 1994. , pp. 100-107. (doi:10.1117/12.187332).

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Description/Abstract

Germanium and silicon optical transmissive components are widely used in infrared lenses, filter substrates, etc. We demonstrate that severe loss can be induced in some germanium samples by illumination in the visible or near infrared with power densities in the region of watts per square centimeter. The absorption arises from light hole to heavy hole inter valence band transitions. The strength of the absorption induced depends on a number of parameters not normally controlled in optical applications, such as minority carrier lifetime and surface recombination velocity. The effect is very much weaker in silicon.

Item Type: Conference or Workshop Item (Paper)
Digital Object Identifier (DOI): doi:10.1117/12.187332
Additional Information: ISSN: 0277-786X
Venue - Dates: SPIE International Symposium on Optics Imaging and Instrumentation, United States, 1994-07-24 - 1994-07-29
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ePrint ID: 77086
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Date Event
1994Published
Date Deposited: 11 Mar 2010
Last Modified: 18 Apr 2017 20:33
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/77086

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