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Ion implanted quasi-three-level Yb:YAG waveguide lasers

Shepherd, D.P., Hanna, D.C., Jones, J.K., Large, A.C., Tropper, A.C., Chandler, P.J., Townsend, P.D. and Zhang, L. (1993) Ion implanted quasi-three-level Yb:YAG waveguide lasers In Proceedings of Conference on Lasers and Electro-Optics. Optical Society of America., p. 626.

Record type: Conference or Workshop Item (Paper)

Abstract

Yb:YAG has manv advantages compared to the widely used Nd:YAG system. These include closer pump and laser wavelengths, leading to a more efficient transfer of energy from the pump to laser photons and less thermal loading of the gain medium. Excited state absorption, upconversion, and concentration quenching are also reduced because of the fact that there is only one excited 4f manifold. Efficient, room-temperature operation of a bulk Yb:YAG laser at 1.03 µm has recently been reported showing that the broad absorption bands are well suited to diode pumping

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Published date: 1993
Venue - Dates: Conference on Lasers and Electro-Optics (CLEO '93), United States, 1993-05-02 - 1993-05-07
Organisations: Physics & Astronomy

Identifiers

Local EPrints ID: 77311
URI: http://eprints.soton.ac.uk/id/eprint/77311
ISBN: 1557522995
PURE UUID: 579d79e5-2548-409d-8bf3-f3bdd6f59f25
ORCID for D.P. Shepherd: ORCID iD orcid.org/0000-0002-4561-8184

Catalogue record

Date deposited: 11 Mar 2010
Last modified: 18 Jul 2017 23:33

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Contributors

Author: D.P. Shepherd ORCID iD
Author: D.C. Hanna
Author: J.K. Jones
Author: A.C. Large
Author: A.C. Tropper
Author: P.J. Chandler
Author: P.D. Townsend
Author: L. Zhang

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