Ion implanted quasi-three-level Yb:YAG waveguide lasers


Shepherd, D.P., Hanna, D.C., Jones, J.K., Large, A.C., Tropper, A.C., Chandler, P.J., Townsend, P.D. and Zhang, L. (1993) Ion implanted quasi-three-level Yb:YAG waveguide lasers In Proceedings of Conference on Lasers and Electro-Optics. Optical Society of America., p. 626.

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Description/Abstract

Yb:YAG has manv advantages compared to the widely used Nd:YAG system. These include closer pump and laser wavelengths, leading to a more efficient transfer of energy from the pump to laser photons and less thermal loading of the gain medium. Excited state absorption, upconversion, and concentration quenching are also reduced because of the fact that there is only one excited 4f manifold. Efficient, room-temperature operation of a bulk Yb:YAG laser at 1.03 µm has recently been reported showing that the broad absorption bands are well suited to diode pumping

Item Type: Conference or Workshop Item (Paper)
ISBNs: 9781557522993 (print)
1557522995 (print)
Venue - Dates: Conference on Lasers and Electro-Optics (CLEO '93), United States, 1993-05-02 - 1993-05-07
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Organisations: Physics & Astronomy
ePrint ID: 77311
Date :
Date Event
1993Published
Date Deposited: 11 Mar 2010
Last Modified: 18 Apr 2017 20:31
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/77311

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