A low threshold quasi-three-level 946nm Nd:YAG epitaxial waveguide laser
A low threshold quasi-three-level 946nm Nd:YAG epitaxial waveguide laser
We report the 946nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4mW and 1.2mW respectively are lower than those reported for bulk lasers when using a similar experimental set up. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.
Hanna, D.C.
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Large, A.C.
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Shepherd, D.P.
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Tropper, A.C.
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Chartier, I.
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Ferrand, B.
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Pelenc, D.
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1993
Hanna, D.C.
3da5a5b4-71c2-4441-bb67-21f0d28a187d
Large, A.C.
712e26d3-4e3b-467f-8f8c-d9e2dbc042b9
Shepherd, D.P.
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Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Chartier, I.
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Ferrand, B.
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Pelenc, D.
320be697-57ce-4b85-82bb-c18510d87f7f
Hanna, D.C., Large, A.C., Shepherd, D.P., Tropper, A.C., Chartier, I., Ferrand, B. and Pelenc, D.
(1993)
A low threshold quasi-three-level 946nm Nd:YAG epitaxial waveguide laser.
ASSL'93: Advanced Solid-State Lasers, New Orleans, United States.
01 Feb 1993.
Record type:
Conference or Workshop Item
(Paper)
Abstract
We report the 946nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4mW and 1.2mW respectively are lower than those reported for bulk lasers when using a similar experimental set up. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.
More information
Published date: 1993
Venue - Dates:
ASSL'93: Advanced Solid-State Lasers, New Orleans, United States, 1993-02-01 - 1993-02-01
Identifiers
Local EPrints ID: 77316
URI: http://eprints.soton.ac.uk/id/eprint/77316
PURE UUID: c799422c-0a64-4634-aa1f-0b73dc0ad795
Catalogue record
Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 02:34
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Contributors
Author:
D.C. Hanna
Author:
A.C. Large
Author:
D.P. Shepherd
Author:
A.C. Tropper
Author:
I. Chartier
Author:
B. Ferrand
Author:
D. Pelenc
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