A low threshold quasi-three-level 946nm Nd:YAG epitaxial waveguide laser


Hanna, D.C., Large, A.C., Shepherd, D.P., Tropper, A.C., Chartier, I., Ferrand, B. and Pelenc, D. (1993) A low threshold quasi-three-level 946nm Nd:YAG epitaxial waveguide laser At ASSL 93: Advanced Solid State Lasers, United States. 01 Feb 1993.

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Description/Abstract

We report the 946nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4mW and 1.2mW respectively are lower than those reported for bulk lasers when using a similar experimental set up. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.

Item Type: Conference or Workshop Item (Paper)
Venue - Dates: ASSL 93: Advanced Solid State Lasers, United States, 1993-02-01 - 1993-02-01
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ePrint ID: 77316
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Date Event
1993Published
Date Deposited: 11 Mar 2010
Last Modified: 18 Apr 2017 20:31
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/77316

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