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Comparative study of photoluminescence in ordered and disordered Ga0.5In0.5P alloys under hydrostatic pressure

Comparative study of photoluminescence in ordered and disordered Ga0.5In0.5P alloys under hydrostatic pressure
Comparative study of photoluminescence in ordered and disordered Ga0.5In0.5P alloys under hydrostatic pressure
We have measured the photoluminescence (PL) spectra of ordered GaInP alloys grown by organometallic vapor phase epitaxy (OMVPE) at three different growth temperatures (Tg =600, 650, and 700°C) as a function of pressure up to about 4.0 GPa at a temperature of 300 K. We have also done similar measurements on a disordered (bulk) alloy for comparison. We find that the band-gap energy Eo, derived from the PL peak spectra, of ordered alloys shows a sublinear pressure dependence and is significantly different from that of the disordered sample. The overall shift of Eo with pressure up to 3.5 GPa for the ordered sample grown at 700°C is smaller than for both the ordered material grown at 600°C and the disordered sample studied. The observed behavior of E can be related to the existence of a CuPt-type ordered structure in which the degree of ordering depends on Tg and the repulsion between Gamma-folded states affects the band-gap energy.
experimental study, photoluminescence, hydrostatic pressure, energy gap, disordered system, semiconductor materials, inorganic compound, gallium indium phosphides mixed
0021-4922
276-278
Shoji, M.
ef19bede-1d22-43fc-bbbd-88ca84f64b2b
Kobayashi, T.
de0e4553-c6dc-4570-9544-fd8cd05736d9
Deol, R.S.
804c55d3-704c-4752-b620-0d86b45871dd
Nakahara, J.
f0d53467-21df-4516-a21d-e5bd12c0c647
Shoji, M.
ef19bede-1d22-43fc-bbbd-88ca84f64b2b
Kobayashi, T.
de0e4553-c6dc-4570-9544-fd8cd05736d9
Deol, R.S.
804c55d3-704c-4752-b620-0d86b45871dd
Nakahara, J.
f0d53467-21df-4516-a21d-e5bd12c0c647

Shoji, M., Kobayashi, T., Deol, R.S. and Nakahara, J. (1992) Comparative study of photoluminescence in ordered and disordered Ga0.5In0.5P alloys under hydrostatic pressure. [in special issue: HPSP. International conference No5, Kyoto, JAPAN (18/08/1992)] Japanese Journal of Applied Physics, 32, supplement 1, 276-278.

Record type: Article

Abstract

We have measured the photoluminescence (PL) spectra of ordered GaInP alloys grown by organometallic vapor phase epitaxy (OMVPE) at three different growth temperatures (Tg =600, 650, and 700°C) as a function of pressure up to about 4.0 GPa at a temperature of 300 K. We have also done similar measurements on a disordered (bulk) alloy for comparison. We find that the band-gap energy Eo, derived from the PL peak spectra, of ordered alloys shows a sublinear pressure dependence and is significantly different from that of the disordered sample. The overall shift of Eo with pressure up to 3.5 GPa for the ordered sample grown at 700°C is smaller than for both the ordered material grown at 600°C and the disordered sample studied. The observed behavior of E can be related to the existence of a CuPt-type ordered structure in which the degree of ordering depends on Tg and the repulsion between Gamma-folded states affects the band-gap energy.

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Published date: 1992
Venue - Dates: 5th International Conference on High Pressure in Semiconductor Physics, 1992-08-18 - 1992-08-20
Keywords: experimental study, photoluminescence, hydrostatic pressure, energy gap, disordered system, semiconductor materials, inorganic compound, gallium indium phosphides mixed

Identifiers

Local EPrints ID: 77323
URI: https://eprints.soton.ac.uk/id/eprint/77323
ISSN: 0021-4922
PURE UUID: 48046df4-7b1a-4fb9-8e94-620a5eb589f0

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Date deposited: 11 Mar 2010
Last modified: 18 Jul 2017 23:33

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