Efficient, low threshold ion-implanted channel waveguide lasers
Efficient, low threshold ion-implanted channel waveguide lasers
He+ Ion implantation has been used to create channel waveguides in Nd doped YAG and GGG. Low threshold, efficient, diode-pumped laser performance is reported.
Field, S.J.
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Hanna, D.C.
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Large, A.C.
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Shepherd, D.P.
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Tropper, A.C.
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Chandler, P.J.
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Townsend, P.D.
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Zhang, L.
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1992
Field, S.J.
9a83abb1-bc45-4b90-9ca0-be4d5cb793a6
Hanna, D.C.
3da5a5b4-71c2-4441-bb67-21f0d28a187d
Large, A.C.
712e26d3-4e3b-467f-8f8c-d9e2dbc042b9
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Chandler, P.J.
df497652-94c6-4987-9fe1-a4b93111dadf
Townsend, P.D.
d09c7d3f-d83e-43cd-8ac4-546701bb860f
Zhang, L.
1a6d1add-39ba-4969-8134-8f126844b5f6
Field, S.J., Hanna, D.C., Large, A.C., Shepherd, D.P., Tropper, A.C., Chandler, P.J., Townsend, P.D. and Zhang, L.
(1992)
Efficient, low threshold ion-implanted channel waveguide lasers.
ASSL 924: 9th Topical Meeting on Advanced Solid-State Lasers, Santa Fe, United States.
17 - 19 Feb 1992.
(doi:10.1364/ASSL.1992.DL10).
Record type:
Conference or Workshop Item
(Paper)
Abstract
He+ Ion implantation has been used to create channel waveguides in Nd doped YAG and GGG. Low threshold, efficient, diode-pumped laser performance is reported.
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Published date: 1992
Venue - Dates:
ASSL 924: 9th Topical Meeting on Advanced Solid-State Lasers, Santa Fe, United States, 1992-02-17 - 1992-02-19
Identifiers
Local EPrints ID: 77396
URI: http://eprints.soton.ac.uk/id/eprint/77396
PURE UUID: 6e648312-87ee-4b30-a970-f55cf8a82632
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Date deposited: 11 Mar 2010
Last modified: 12 Nov 2024 02:33
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Contributors
Author:
S.J. Field
Author:
D.C. Hanna
Author:
A.C. Large
Author:
D.P. Shepherd
Author:
A.C. Tropper
Author:
P.J. Chandler
Author:
P.D. Townsend
Author:
L. Zhang
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