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AlxGa1-xAs synthesis by knock-on effect of atoms from Al films on GaAs by As+ implantation

Deol, R.S. and Kobayashi, T. (1991) AlxGa1-xAs synthesis by knock-on effect of atoms from Al films on GaAs by As+ implantation At Memoirs of Kobe University Japan, Japan.

Record type: Conference or Workshop Item (Other)

Abstract

The synthesis of Al(x)Ga(1-x)As by depositing thin films of Al on GaAs substrates and irradiating with arsenic ions has been studied using photoluminescence, transmission electron microscopy and secondary ion mass spectrometry. Following implantation secondary ion mass spectrometry has identified appreciable levels of Al to a depth of about 0.25µm. AlGaAs emission within the photoluminescence spectra was seen for samples implanted with 1 x 10 of As+ at 150 keV through an Al-film of thickness 580 Angstrom and annealed at 950°C for 25sec. Transmission electron microscopy showed these layers to be single-crystal but characterised by dislocation loops of varying sizes

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Published date: October 1991
Venue - Dates: Memoirs of Kobe University Japan, Japan, 1991-10-01

Identifiers

Local EPrints ID: 77402
URI: http://eprints.soton.ac.uk/id/eprint/77402
PURE UUID: e6ba7bed-2015-45aa-ae17-6239f8a696bf

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Date deposited: 11 Mar 2010
Last modified: 18 Jul 2017 23:32

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Contributors

Author: R.S. Deol
Author: T. Kobayashi

University divisions

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