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Epitaxial growth of high quality ZnS films on sapphire and silicon by pulsed laser deposition

Epitaxial growth of high quality ZnS films on sapphire and silicon by pulsed laser deposition
Epitaxial growth of high quality ZnS films on sapphire and silicon by pulsed laser deposition
We report for the first time, epitaxial growth of high-quality ZnS films on sapphire and silicon substrates, using pulsed laser deposition. X-ray diffraction results show that at all growth temperatures from 200°C to 680°C, epitaxial wurtzite (002) ZnS films have been successfully grown on (1012) sapphire and (001) silicon substrates. X-ray diffraction data yield full width at half maximum 2theta values of 0.13° for as-grown samples, compared with 28 values or 0.09° and 0.08° for the bare sapphire and silicon substrates respectively.
0268-1242
695-698
Xin, Zhi-Jun
ba358883-dc42-4235-a2c7-9208bedc4e98
Peaty, Richard J.
c937f827-4874-412b-a7b4-0d097dab35de
Rutt, Harvey N.
b863b161-fb40-464b-81b9-adc51e70cad5
Eason, Robert W.
e38684c3-d18c-41b9-a4aa-def67283b020
Xin, Zhi-Jun
ba358883-dc42-4235-a2c7-9208bedc4e98
Peaty, Richard J.
c937f827-4874-412b-a7b4-0d097dab35de
Rutt, Harvey N.
b863b161-fb40-464b-81b9-adc51e70cad5
Eason, Robert W.
e38684c3-d18c-41b9-a4aa-def67283b020

Xin, Zhi-Jun, Peaty, Richard J., Rutt, Harvey N. and Eason, Robert W. (1999) Epitaxial growth of high quality ZnS films on sapphire and silicon by pulsed laser deposition. Semiconductor Science and Technology, 14 (8), 695-698. (doi:10.1088/0268-1242/14/8/305).

Record type: Article

Abstract

We report for the first time, epitaxial growth of high-quality ZnS films on sapphire and silicon substrates, using pulsed laser deposition. X-ray diffraction results show that at all growth temperatures from 200°C to 680°C, epitaxial wurtzite (002) ZnS films have been successfully grown on (1012) sapphire and (001) silicon substrates. X-ray diffraction data yield full width at half maximum 2theta values of 0.13° for as-grown samples, compared with 28 values or 0.09° and 0.08° for the bare sapphire and silicon substrates respectively.

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Published date: August 1999

Identifiers

Local EPrints ID: 77820
URI: http://eprints.soton.ac.uk/id/eprint/77820
ISSN: 0268-1242
PURE UUID: 41498b90-d5f0-4ecd-9281-b5d6db74908f
ORCID for Robert W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

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Date deposited: 11 Mar 2010
Last modified: 09 Jul 2021 01:34

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Contributors

Author: Zhi-Jun Xin
Author: Richard J. Peaty
Author: Harvey N. Rutt
Author: Robert W. Eason ORCID iD

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