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Laser operation of a Nd:LaF3 thin film grown by molecular-beam epitaxy

Laser operation of a Nd:LaF3 thin film grown by molecular-beam epitaxy
Laser operation of a Nd:LaF3 thin film grown by molecular-beam epitaxy
We present the first laser operation of a dielectric waveguide fabricated by molecular-beam epitaxy. Details of the growth process, the Nd:LaF3 spectroscopic properties, and the laser performance at 1.06µm are given.
0013-5194
398-400
Daran, E.
85e99bdf-124c-4950-9660-5ad7d555c799
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Bhutta, T.
6e32b59c-cd48-4454-9378-a7a8ab10d28e
Serrano, C.
2d3edd5c-6808-4ce5-886f-b12a6b859a6b
Daran, E.
85e99bdf-124c-4950-9660-5ad7d555c799
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Bhutta, T.
6e32b59c-cd48-4454-9378-a7a8ab10d28e
Serrano, C.
2d3edd5c-6808-4ce5-886f-b12a6b859a6b

Daran, E., Shepherd, D.P., Bhutta, T. and Serrano, C. (1999) Laser operation of a Nd:LaF3 thin film grown by molecular-beam epitaxy. Electronics Letters, 35 (5), 398-400. (doi:10.1049/el:19990303).

Record type: Article

Abstract

We present the first laser operation of a dielectric waveguide fabricated by molecular-beam epitaxy. Details of the growth process, the Nd:LaF3 spectroscopic properties, and the laser performance at 1.06µm are given.

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Published date: 1999

Identifiers

Local EPrints ID: 77822
URI: http://eprints.soton.ac.uk/id/eprint/77822
ISSN: 0013-5194
PURE UUID: a676b02e-fffe-48ed-8e16-f2102fc78c4e
ORCID for D.P. Shepherd: ORCID iD orcid.org/0000-0002-4561-8184

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Date deposited: 11 Mar 2010
Last modified: 07 Oct 2020 03:13

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Contributors

Author: E. Daran
Author: D.P. Shepherd ORCID iD
Author: T. Bhutta
Author: C. Serrano

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