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A Ti:sapphire planar waveguide laser grown by pulsed laser deposition

A Ti:sapphire planar waveguide laser grown by pulsed laser deposition
A Ti:sapphire planar waveguide laser grown by pulsed laser deposition
This paper documents the lasing performance of a waveguiding layer of Ti:sapphire, of ~12µm thickness, grown by pulsed laser deposition from a 0.12 wt % Ti2O3 Ti:sapphire single crystal target onto an undoped z-cut sapphire substrate. Lasing around 800nm is observed, when the waveguide layer is pumped by an argon ion laser, running on all blue green lines, with an absorbed power threshold of 0.56W using high reflectivity (R>98%) mirrors. Using a 5% pump duty cycle and a T = 35% output coupler, a slope efficiency of 26% with respect to absorbed power is obtained, giving quasi-CW output powers in excess of 350mW.
0146-9592
1556-1558
Anderson, A.A.
646395a3-662e-4ad2-9a45-50ec63847687
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Hickey, L.M.B.
8879d8f5-f865-4099-8867-8ab9097ae74e
Jelínek, M.
058ae7ba-cd86-4f99-990e-2e8f78cd4484
Grivas, C.
7f564818-0ac0-4127-82a7-22e87ac35f1a
Gill, D.S.
0837886a-5999-478f-8b32-ea1996611c3c
Vainos, N.A.
e4f22637-2f1c-4dec-af67-d059261dd5b2
Anderson, A.A.
646395a3-662e-4ad2-9a45-50ec63847687
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Hickey, L.M.B.
8879d8f5-f865-4099-8867-8ab9097ae74e
Jelínek, M.
058ae7ba-cd86-4f99-990e-2e8f78cd4484
Grivas, C.
7f564818-0ac0-4127-82a7-22e87ac35f1a
Gill, D.S.
0837886a-5999-478f-8b32-ea1996611c3c
Vainos, N.A.
e4f22637-2f1c-4dec-af67-d059261dd5b2

Anderson, A.A., Eason, R.W., Hickey, L.M.B., Jelínek, M., Grivas, C., Gill, D.S. and Vainos, N.A. (1997) A Ti:sapphire planar waveguide laser grown by pulsed laser deposition. Optics Letters, 22 (20), 1556-1558. (doi:10.1364/OL.22.001556).

Record type: Article

Abstract

This paper documents the lasing performance of a waveguiding layer of Ti:sapphire, of ~12µm thickness, grown by pulsed laser deposition from a 0.12 wt % Ti2O3 Ti:sapphire single crystal target onto an undoped z-cut sapphire substrate. Lasing around 800nm is observed, when the waveguide layer is pumped by an argon ion laser, running on all blue green lines, with an absorbed power threshold of 0.56W using high reflectivity (R>98%) mirrors. Using a 5% pump duty cycle and a T = 35% output coupler, a slope efficiency of 26% with respect to absorbed power is obtained, giving quasi-CW output powers in excess of 350mW.

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Published date: 1997
Learn more about Optoelectronics Research Centre research

Identifiers

Local EPrints ID: 77952
URI: http://eprints.soton.ac.uk/id/eprint/77952
DOI: doi:10.1364/OL.22.001556
ISSN: 0146-9592
PURE UUID: aad58bbf-28f0-45f5-a64b-0acd7d7ce629
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

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Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 02:33

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Contributors

Author: A.A. Anderson
Author: R.W. Eason ORCID iD
Author: L.M.B. Hickey
Author: M. Jelínek
Author: C. Grivas
Author: D.S. Gill
Author: N.A. Vainos

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