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Stable, high-power, single frequency generation at 532nm from a diode-bar-pumped Nd:YAG ring laser with intracavity LBO frequency doubler

Stable, high-power, single frequency generation at 532nm from a diode-bar-pumped Nd:YAG ring laser with intracavity LBO frequency doubler
Stable, high-power, single frequency generation at 532nm from a diode-bar-pumped Nd:YAG ring laser with intracavity LBO frequency doubler
We obtained 2.5 W of single-frequency TEMoo output at 532 nm using a Brewster-angled LBO crystal for intracavity second-harmonic generation in a diode-bar-pumped Nd:YAG laser. By inserting a thin uncoated étalon, the 1061.4 nm laser transition can be selected, generating 1.6 W of output at 530.7 nm.
0003-6935
4149-4152
Martin, Kevin I.
24ea41d6-ed94-4637-b81b-68b3e8476273
Clarkson, W.Andrew
3b060f63-a303-4fa5-ad50-95f166df1ba2
Hanna, David C.
3da5a5b4-71c2-4441-bb67-21f0d28a187d
Martin, Kevin I.
24ea41d6-ed94-4637-b81b-68b3e8476273
Clarkson, W.Andrew
3b060f63-a303-4fa5-ad50-95f166df1ba2
Hanna, David C.
3da5a5b4-71c2-4441-bb67-21f0d28a187d

Martin, Kevin I., Clarkson, W.Andrew and Hanna, David C. (1997) Stable, high-power, single frequency generation at 532nm from a diode-bar-pumped Nd:YAG ring laser with intracavity LBO frequency doubler. Applied Optics, 36 (18), 4149-4152. (doi:10.1364/AO.36.004149).

Record type: Article

Abstract

We obtained 2.5 W of single-frequency TEMoo output at 532 nm using a Brewster-angled LBO crystal for intracavity second-harmonic generation in a diode-bar-pumped Nd:YAG laser. By inserting a thin uncoated étalon, the 1061.4 nm laser transition can be selected, generating 1.6 W of output at 530.7 nm.

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Published date: 1997
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Identifiers

Local EPrints ID: 77990
URI: http://eprints.soton.ac.uk/id/eprint/77990
DOI: doi:10.1364/AO.36.004149
ISSN: 0003-6935
PURE UUID: 2f5ddab3-bb2b-48f9-ab70-747580ab6e94

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Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 00:03

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Contributors

Author: Kevin I. Martin
Author: W.Andrew Clarkson
Author: David C. Hanna

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