Performance of a low loss pulsed laser deposited Nd:Gd₃Ga₅O₁₂ waveguide laser at 1.06µm and 0.94µm

Bonner, C.L., Anderson, A.A., Eason, R.W., Shepherd, D.P., Gill, D.S., Grivas, C. and Vainos, N.A. (1997) Performance of a low loss pulsed laser deposited Nd:Gd₃Ga₅O₁₂ waveguide laser at 1.06µm and 0.94µm. Optics Letters, 22 (13), 988-990. (doi:10.1364/OL.22.000988).

Abstract

We report the laser performance of a low propagation loss neodymium doped Gd₃Ga₅O₁₂ (Nd:GGG) waveguide fabricated by pulsed laser deposition. An 8µm thick crystalline Nd:GGG film grown on an undoped Y₃Al₅O₁₂ (YAG) substrate lases at 1.060µm and 1.062µm, when pumped by a Ti:sapphire laser operating at 740nm or 808nm. Using a 2.2% output coupler a 1060nm laser threshold of 4mW and a slope efficiency of 20% were observed. Laser action has also been achieved, we believe for the first time in Nd:GGG, on the quasi-three level 937nm transition. With a 2% output coupler at this wavelength a laser threshold of 17mW and a 20% slope efficiency were obtained. This demonstration of low propagation loss combined with the fact that these waveguides have a very high numerical aperture, make pulsed laser deposited thin films attractive for high power diode pumped devices.

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Contributors

Author: R.W. Eason

Author: D.P. Shepherd

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