Photorefractive damage removal in annealed-proton-exchanged LiNbO3 channel waveguides
Photorefractive damage removal in annealed-proton-exchanged LiNbO3 channel waveguides
Ion beam implantation has been used as a postprocessing technique to dramatically reduce the photorefractive effect in lithium niobate channel waveguides. The waveguides were fabricated by proton exchange and then annealed 1.0 MeV H+ ions were implanted through the existing channel waveguides such that the "damaged layer" was created beneath the existing channel waveguide. The output characteristics from the waveguides were subsequently examined. Highly stable, single-mode outputs were observed with the waveguides retaining up to 95% of their original transmission. It is thought that this decrease in photorefractive susceptibility can be explained by the implant changing the defect structure and hence photovoltaic properties of the material.
2094-2096
Robertson, Elaine E.
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Eason, Robert W.
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Yokoo, Yoshiatsu
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Chandler, Peter J.
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April 1997
Robertson, Elaine E.
4b6273ff-7620-4d6f-ac65-80326b18a01d
Eason, Robert W.
e38684c3-d18c-41b9-a4aa-def67283b020
Yokoo, Yoshiatsu
4be99811-c645-4e94-90a0-cba0f6f2786e
Chandler, Peter J.
6b371667-e8ee-44a7-9680-8f540c1f6bd6
Robertson, Elaine E., Eason, Robert W., Yokoo, Yoshiatsu and Chandler, Peter J.
(1997)
Photorefractive damage removal in annealed-proton-exchanged LiNbO3 channel waveguides.
Applied Physics Letters, 70 (16), .
(doi:10.1063/1.118959).
Abstract
Ion beam implantation has been used as a postprocessing technique to dramatically reduce the photorefractive effect in lithium niobate channel waveguides. The waveguides were fabricated by proton exchange and then annealed 1.0 MeV H+ ions were implanted through the existing channel waveguides such that the "damaged layer" was created beneath the existing channel waveguide. The output characteristics from the waveguides were subsequently examined. Highly stable, single-mode outputs were observed with the waveguides retaining up to 95% of their original transmission. It is thought that this decrease in photorefractive susceptibility can be explained by the implant changing the defect structure and hence photovoltaic properties of the material.
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Published date: April 1997
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Local EPrints ID: 78021
URI: http://eprints.soton.ac.uk/id/eprint/78021
ISSN: 0003-6951
PURE UUID: aeafae3b-1816-486f-9204-502f46a48321
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Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 02:33
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Author:
Elaine E. Robertson
Author:
Robert W. Eason
Author:
Yoshiatsu Yokoo
Author:
Peter J. Chandler
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