Growth of Ti:sapphire single crystal thin films by pulsed laser deposition

Anderson, Andrew A., Eason, Robert W., Jelínek, Miroslav, Grivas, Christos, Lane, David, Rogers, Keith, Hickey, L.M.B. and Fotakis, Costas (1997) Growth of Ti:sapphire single crystal thin films by pulsed laser deposition. Thin Solid Films, 300 (1-2), 68-71. (doi:10.1016/S0040-6090(96)09455-2).

Abstract

This paper documents the growth of single crystal Ti:sapphire thin films, typically 10µm thick, on undoped sapphire substrates using Pulsed Laser Deposition from a Ti:sapphire single crystal target with a doping level of 0.1 % wt Ti₂O₃. These thin films are shown to have very high crystal quality using Ion Beam Channelling and X-Ray Diffraction Techniques. The degree of titanium incorporation into the films is investigated using Inductively Coupled Plasma Mass Spectrometry and Particle Induced X-ray Emission. These techniques show that levels of up to 0.08% wt Ti₂O₃ are present in the deposited layers.

This record has no associated files available for download.

Contributors

Author: Robert W. Eason

Download statistics