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Growth of Ti:sapphire single crystal thin films by pulsed laser deposition

Anderson, Andrew A., Eason, Robert W., Jelínek, Miroslav, Grivas, Christos, Lane, David, Rogers, Keith, Hickey, L.M.B. and Fotakis, Costas (1997) Growth of Ti:sapphire single crystal thin films by pulsed laser deposition Thin Solid Films, 300, (1-2), pp. 68-71. (doi:10.1016/S0040-6090(96)09455-2).

Record type: Article

Abstract

This paper documents the growth of single crystal Ti:sapphire thin films, typically 10µm thick, on undoped sapphire substrates using Pulsed Laser Deposition from a Ti:sapphire single crystal target with a doping level of 0.1 % wt Ti2O3. These thin films are shown to have very high crystal quality using Ion Beam Channelling and X-Ray Diffraction Techniques. The degree of titanium incorporation into the films is investigated using Inductively Coupled Plasma Mass Spectrometry and Particle Induced X-ray Emission. These techniques show that levels of up to 0.08% wt Ti2O3 are present in the deposited layers.

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Published date: May 1997

Identifiers

Local EPrints ID: 78062
URI: http://eprints.soton.ac.uk/id/eprint/78062
ISSN: 0040-6090
PURE UUID: 6a0e6a03-c9c6-4d0d-ac99-f9f5ea663eda
ORCID for Robert W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

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Date deposited: 11 Mar 2010
Last modified: 18 Jul 2017 23:27

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Contributors

Author: Andrew A. Anderson
Author: Robert W. Eason ORCID iD
Author: Miroslav Jelínek
Author: Christos Grivas
Author: David Lane
Author: Keith Rogers
Author: L.M.B. Hickey
Author: Costas Fotakis

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