Growth of Ti:sapphire single crystal thin films by pulsed laser deposition


Anderson, Andrew A., Eason, Robert W., Jelínek, Miroslav, Grivas, Christos, Lane, David, Rogers, Keith, Hickey, L.M.B. and Fotakis, Costas (1997) Growth of Ti:sapphire single crystal thin films by pulsed laser deposition Thin Solid Films, 300, (1-2), pp. 68-71. (doi:10.1016/S0040-6090(96)09455-2).

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Description/Abstract

This paper documents the growth of single crystal Ti:sapphire thin films, typically 10µm thick, on undoped sapphire substrates using Pulsed Laser Deposition from a Ti:sapphire single crystal target with a doping level of 0.1 % wt Ti2O3. These thin films are shown to have very high crystal quality using Ion Beam Channelling and X-Ray Diffraction Techniques. The degree of titanium incorporation into the films is investigated using Inductively Coupled Plasma Mass Spectrometry and Particle Induced X-ray Emission. These techniques show that levels of up to 0.08% wt Ti2O3 are present in the deposited layers.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1016/S0040-6090(96)09455-2
ISSNs: 0040-6090 (print)
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ePrint ID: 78062
Date :
Date Event
May 1997Published
Date Deposited: 11 Mar 2010
Last Modified: 18 Apr 2017 20:25
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/78062

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