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Growth of Ti:sapphire single crystal thin films by pulsed laser deposition

Growth of Ti:sapphire single crystal thin films by pulsed laser deposition
Growth of Ti:sapphire single crystal thin films by pulsed laser deposition
This paper documents the growth of single crystal Ti:sapphire thin films, typically 10µm thick, on undoped sapphire substrates using Pulsed Laser Deposition from a Ti:sapphire single crystal target with a doping level of 0.1 % wt Ti2O3. These thin films are shown to have very high crystal quality using Ion Beam Channelling and X-Ray Diffraction Techniques. The degree of titanium incorporation into the films is investigated using Inductively Coupled Plasma Mass Spectrometry and Particle Induced X-ray Emission. These techniques show that levels of up to 0.08% wt Ti2O3 are present in the deposited layers.
0040-6090
68-71
Anderson, Andrew A.
b7ad6a3d-3b13-4ae6-80a2-1f5052868810
Eason, Robert W.
e38684c3-d18c-41b9-a4aa-def67283b020
Jelínek, Miroslav
e0c8c90d-38ba-4fca-a344-63c81c683215
Grivas, Christos
7f564818-0ac0-4127-82a7-22e87ac35f1a
Lane, David
47324f36-0846-4e68-80f1-d232accf253d
Rogers, Keith
ba2185cc-85fe-4fb4-872f-30c0602f95c4
Hickey, L.M.B.
8879d8f5-f865-4099-8867-8ab9097ae74e
Fotakis, Costas
ae4a86f1-2e67-43f7-bb53-2417f7c11cbe
Anderson, Andrew A.
b7ad6a3d-3b13-4ae6-80a2-1f5052868810
Eason, Robert W.
e38684c3-d18c-41b9-a4aa-def67283b020
Jelínek, Miroslav
e0c8c90d-38ba-4fca-a344-63c81c683215
Grivas, Christos
7f564818-0ac0-4127-82a7-22e87ac35f1a
Lane, David
47324f36-0846-4e68-80f1-d232accf253d
Rogers, Keith
ba2185cc-85fe-4fb4-872f-30c0602f95c4
Hickey, L.M.B.
8879d8f5-f865-4099-8867-8ab9097ae74e
Fotakis, Costas
ae4a86f1-2e67-43f7-bb53-2417f7c11cbe

Anderson, Andrew A., Eason, Robert W., Jelínek, Miroslav, Grivas, Christos, Lane, David, Rogers, Keith, Hickey, L.M.B. and Fotakis, Costas (1997) Growth of Ti:sapphire single crystal thin films by pulsed laser deposition. Thin Solid Films, 300 (1-2), 68-71. (doi:10.1016/S0040-6090(96)09455-2).

Record type: Article

Abstract

This paper documents the growth of single crystal Ti:sapphire thin films, typically 10µm thick, on undoped sapphire substrates using Pulsed Laser Deposition from a Ti:sapphire single crystal target with a doping level of 0.1 % wt Ti2O3. These thin films are shown to have very high crystal quality using Ion Beam Channelling and X-Ray Diffraction Techniques. The degree of titanium incorporation into the films is investigated using Inductively Coupled Plasma Mass Spectrometry and Particle Induced X-ray Emission. These techniques show that levels of up to 0.08% wt Ti2O3 are present in the deposited layers.

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Published date: May 1997

Identifiers

Local EPrints ID: 78062
URI: https://eprints.soton.ac.uk/id/eprint/78062
ISSN: 0040-6090
PURE UUID: 6a0e6a03-c9c6-4d0d-ac99-f9f5ea663eda
ORCID for Robert W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

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Date deposited: 11 Mar 2010
Last modified: 20 Jul 2019 01:25

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