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Direct measurement of carrier spin relaxation times in opaque solids using the specular inverse Faraday effect

Direct measurement of carrier spin relaxation times in opaque solids using the specular inverse Faraday effect
Direct measurement of carrier spin relaxation times in opaque solids using the specular inverse Faraday effect
Using a spectroscopic technique based on the transient specular inverse Faraday effect (SIFE) we found the electron spin relaxation time in bulk GaAs at room temperature to be 11 ± 1 ps. The hole spin dynamics gives a SIFE signal of the opposite sign and may be resolved in the time-domain.
0375-9601
379-383
Bungay, A.R.
af92824a-1e97-4e31-9f03-24a9200e688b
Popov, S.V.
f078b148-b92c-4ffb-acff-76c6d68377fb
Shatwell, I.R.
d94ecb47-9f9f-411c-a0a8-1828c6be3e5d
Zheludev, N.I.
32fb6af7-97e4-4d11-bca6-805745e40cc6
Bungay, A.R.
af92824a-1e97-4e31-9f03-24a9200e688b
Popov, S.V.
f078b148-b92c-4ffb-acff-76c6d68377fb
Shatwell, I.R.
d94ecb47-9f9f-411c-a0a8-1828c6be3e5d
Zheludev, N.I.
32fb6af7-97e4-4d11-bca6-805745e40cc6

Bungay, A.R., Popov, S.V., Shatwell, I.R. and Zheludev, N.I. (1997) Direct measurement of carrier spin relaxation times in opaque solids using the specular inverse Faraday effect. Physics Letters A, 234 (5), 379-383. (doi:10.1016/S0375-9601(97)00527-6).

Record type: Article

Abstract

Using a spectroscopic technique based on the transient specular inverse Faraday effect (SIFE) we found the electron spin relaxation time in bulk GaAs at room temperature to be 11 ± 1 ps. The hole spin dynamics gives a SIFE signal of the opposite sign and may be resolved in the time-domain.

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Published date: October 1997
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Identifiers

Local EPrints ID: 78191
URI: http://eprints.soton.ac.uk/id/eprint/78191
DOI: doi:10.1016/S0375-9601(97)00527-6
ISSN: 0375-9601
PURE UUID: 0cc7dfda-647a-4ad2-b099-24c8001d220b
ORCID for N.I. Zheludev: ORCID iD orcid.org/0000-0002-1013-6636

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Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 02:36

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Contributors

Author: A.R. Bungay
Author: S.V. Popov
Author: I.R. Shatwell
Author: N.I. Zheludev ORCID iD

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