Bungay, A.R., Popov, S.V., Shatwell, I.R. and Zheludev, N.I.
Direct measurement of carrier spin relaxation times in opaque solids using the specular inverse Faraday effect
Physics Letters A, 234, (5), . (doi:10.1016/S0375-9601(97)00527-6).
Full text not available from this repository.
Using a spectroscopic technique based on the transient specular inverse Faraday effect (SIFE) we found the electron spin relaxation time in bulk GaAs at room temperature to be 11 ± 1 ps. The hole spin dynamics gives a SIFE signal of the opposite sign and may be resolved in the time-domain
Actions (login required)