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High-pressure photoluminescence study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy

Kobayashi, T. and Deol, R.S. (1991) High-pressure photoluminescence study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy Applied Physics Letters, 58, (12), pp. 1289-1291. (doi:10.1063/1.105212).

Record type: Article

Abstract

Photoluminescence (PL) measurements on Ga(0.5)In(0.5)P grown by organometallic vapor phase epitaxy on GaAs substrates at various growth temperatures have been made as a function of pressure up to about 4.5 GPa. In the pressure range 0-3.8 GPa the PL spectrum exhibits a shift to higher energies. It is found that the pressure coefficient of the PL peak energy depends significantly on the growth temperature and hence on the degree of ordering. These results are partly explained in terms of repulsion between the Gamma-folded energy states in the CuPt-type ordered structure.

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Published date: 1991

Identifiers

Local EPrints ID: 78369
URI: http://eprints.soton.ac.uk/id/eprint/78369
ISSN: 0003-6951
PURE UUID: 20b6a6ea-7491-407c-839b-995bcf652e79

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Date deposited: 11 Mar 2010
Last modified: 18 Jul 2017 23:24

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Contributors

Author: T. Kobayashi
Author: R.S. Deol

University divisions

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