Characterisation of Ga-La-S chalcogenide glass thin film optical waveguides, fabricated by pulsed laser deposition

Abstract

The fabrication of stoichiometric thin-film optical waveguides of Ga-La-S via a pulsed laser deposition technique is reported. Stoichiometric films are grown by ablating Ga-La-S bulk glass with a KrF excimer laser (lambda=248 nm) at an incident laser flux ≥ 3.5 J/cm². The composition of the films is determined by energy-dispersive X-ray analysis and the refractive index is measured by a dark-mode prism coupling technique. Photoinduced structural rearrangement of the as-deposited films leads to a blueshift in the visible absorption edge and a permanent refractive index change, Δn, of -1%. On the basis of these results, grating structures have been written with both blue light, and e-beam addressing, and their suitability for integrated optical structures assessed.

More information

Identifiers

ORCID for R.W. Eason: orcid.org/0000-0001-9704-2204

Catalogue record

Export record

Altmetrics