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Characterisation of Ga-La-S chalcogenide glass thin film optical waveguides, fabricated by pulsed laser deposition

Record type: Article

The fabrication of stoichiometric thin-film optical waveguides of Ga-La-S via a pulsed laser deposition technique is reported. Stoichiometric films are grown by ablating Ga-La-S bulk glass with a KrF excimer laser (lambda=248 nm) at an incident laser flux >/= 3.5 J/cm^2. The composition of the films is determined by energy-dispersive X-ray analysis and the refractive index is measured by a dark-mode prism coupling technique. Photoinduced structural rearrangement of the as-deposited films leads to a blueshift in the visible absorption edge and a permanent refractive index change, Deltan, of -1%. On the basis of these results, grating structures have been written with both blue light, and e-beam addressing, and their suitability for integrated optical structures assessed.

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Citation

Gill, D.S., Eason, R.W., Zaldo, C., Rutt, H.N. and Vainos, N.A. (1995) Characterisation of Ga-La-S chalcogenide glass thin film optical waveguides, fabricated by pulsed laser deposition Journal of Non-Crystalline Solids, 191, (3), pp. 321-326. (doi:10.1016/0022-3093(95)00319-3).

More information

Published date: December 1995

Identifiers

Local EPrints ID: 78400
URI: http://eprints.soton.ac.uk/id/eprint/78400
ISSN: 0022-3093
PURE UUID: 3a3985e3-2efa-45e8-8908-a38d5d0e0bc3
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

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Date deposited: 11 Mar 2010
Last modified: 18 Jul 2017 23:24

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Contributors

Author: D.S. Gill
Author: R.W. Eason ORCID iD
Author: C. Zaldo
Author: H.N. Rutt
Author: N.A. Vainos

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