Indium tin oxide films by sequential evaporation
Indium tin oxide films by sequential evaporation
In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 x 10-5 Ω m and optical transparency greater than 90% have been obtained. The optical attenuation caused by the films deposited on top of ion-exchanged optical waveguides has been measured. This method has also been used for preparing thicker ITO films.
227-233
Yao, J.L.
b8ec65c5-f1a6-4ced-9495-d07f16769460
Hao, S.
c8f1bb26-119c-425f-bd7d-32071b2ff6d2
Wilkinson, J.S.
73483cf3-d9f2-4688-9b09-1c84257884ca
15 August 1990
Yao, J.L.
b8ec65c5-f1a6-4ced-9495-d07f16769460
Hao, S.
c8f1bb26-119c-425f-bd7d-32071b2ff6d2
Wilkinson, J.S.
73483cf3-d9f2-4688-9b09-1c84257884ca
Yao, J.L., Hao, S. and Wilkinson, J.S.
(1990)
Indium tin oxide films by sequential evaporation.
Thin Solid Films, 189 (2), .
(doi:10.1016/0040-6090(90)90451-I).
Abstract
In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 x 10-5 Ω m and optical transparency greater than 90% have been obtained. The optical attenuation caused by the films deposited on top of ion-exchanged optical waveguides has been measured. This method has also been used for preparing thicker ITO films.
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Published date: 15 August 1990
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Local EPrints ID: 78429
URI: http://eprints.soton.ac.uk/id/eprint/78429
ISSN: 0040-6090
PURE UUID: bcc69996-04f0-4291-b0b5-c26c78d74b42
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Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 02:32
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Author:
J.L. Yao
Author:
S. Hao
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