Indium tin oxide films by sequential evaporation

Yao, J.L., Hao, S. and Wilkinson, J.S. (1990) Indium tin oxide films by sequential evaporation Thin Solid Films, 189, (2), pp. 227-233. (doi:10.1016/0040-6090(90)90451-I).


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In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 x 10^-5 Omega m and optical transparency greater than 90% have been obtained. The optical attenuation caused by the films deposited on top of ion-exchanged optical waveguides has been measured. This method has also been used for preparing thicker ITO films.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1016/0040-6090(90)90451-I
ISSNs: 0040-6090 (print)
Related URLs:
ePrint ID: 78429
Date :
Date Event
15 August 1990Published
Date Deposited: 11 Mar 2010
Last Modified: 18 Apr 2017 20:22
Further Information:Google Scholar

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