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Indium tin oxide films by sequential evaporation

Yao, J.L., Hao, S. and Wilkinson, J.S. (1990) Indium tin oxide films by sequential evaporation Thin Solid Films, 189, (2), pp. 227-233. (doi:10.1016/0040-6090(90)90451-I).

Record type: Article


In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 x 10^-5 Omega m and optical transparency greater than 90% have been obtained. The optical attenuation caused by the films deposited on top of ion-exchanged optical waveguides has been measured. This method has also been used for preparing thicker ITO films.

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Published date: 15 August 1990


Local EPrints ID: 78429
ISSN: 0040-6090
PURE UUID: bcc69996-04f0-4291-b0b5-c26c78d74b42
ORCID for J.S. Wilkinson: ORCID iD

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Date deposited: 11 Mar 2010
Last modified: 18 Jul 2017 23:24

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Author: J.L. Yao
Author: S. Hao
Author: J.S. Wilkinson ORCID iD

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