Quasi-three-level 1.03µm laser operation of a planar ion implanted Yb:YAG waveguide


Hanna, D.C., Jones, J.K., Large, A.C., Shepherd, D.P., Tropper, A.C., Chandler, P.J., Rodman, M.J., Townsend, P.D. and Zhang, L. (1993) Quasi-three-level 1.03µm laser operation of a planar ion implanted Yb:YAG waveguide Optics Communications, 99, (3-4), pp. 211-215. (doi:10.1016/0030-4018(93)90081-F).

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Description/Abstract

The first laser operation of an Yb:YAG waveguide is reported. Room temperature, continuous wave operation was achieved at a threshold of 30 mW. Projected thresholds of a few milliwatts for a channel waveguide indicate that for quasi-three level lasers. a waveguide configuration, even if lossy, can be highly beneficial.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1016/0030-4018(93)90081-F
ISSNs: 0030-4018 (print)
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ePrint ID: 78482
Date :
Date Event
1 June 1993Published
Date Deposited: 11 Mar 2010
Last Modified: 18 Apr 2017 20:22
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/78482

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