Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide
Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide
We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.
7-9
Hanna, D.C.
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Large, A.C.
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Shepherd, D.P.
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Tropper, A.C.
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Chartier, I.
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Ferrand, B.
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Pelenc, D.
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1993
Hanna, D.C.
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Large, A.C.
712e26d3-4e3b-467f-8f8c-d9e2dbc042b9
Shepherd, D.P.
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Tropper, A.C.
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Chartier, I.
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Ferrand, B.
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Pelenc, D.
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Hanna, D.C., Large, A.C., Shepherd, D.P., Tropper, A.C., Chartier, I., Ferrand, B. and Pelenc, D.
(1993)
Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide.
Applied Physics Letters, 63, .
(doi:10.1063/1.109703).
Abstract
We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.
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Published date: 1993
Identifiers
Local EPrints ID: 78501
URI: http://eprints.soton.ac.uk/id/eprint/78501
ISSN: 0003-6951
PURE UUID: 6d53bd13-e371-424e-ba59-30cfafe04aee
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Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 02:34
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Contributors
Author:
D.C. Hanna
Author:
A.C. Large
Author:
D.P. Shepherd
Author:
A.C. Tropper
Author:
I. Chartier
Author:
B. Ferrand
Author:
D. Pelenc
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