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Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide

Hanna, D.C., Large, A.C., Shepherd, D.P., Tropper, A.C., Chartier, I., Ferrand, B. and Pelenc, D. (1993) Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide Applied Physics Letters, 63, pp. 7-9. (doi:10.1063/1.109703).

Record type: Article


We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.

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Published date: 1993


Local EPrints ID: 78501
ISSN: 0003-6951
PURE UUID: 6d53bd13-e371-424e-ba59-30cfafe04aee
ORCID for D.P. Shepherd: ORCID iD

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Date deposited: 11 Mar 2010
Last modified: 18 Jul 2017 23:23

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Author: D.C. Hanna
Author: A.C. Large
Author: D.P. Shepherd ORCID iD
Author: A.C. Tropper
Author: I. Chartier
Author: B. Ferrand
Author: D. Pelenc

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