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Magnetic g-factor of electrons in GaAs/AlGaAs quantum wells

Snelling, M.J., Flinn, G.P., Plaut, A.S., Harley, R.T., Tropper, A.C., Eccleston, R. and Phillips, C.C. (1991) Magnetic g-factor of electrons in GaAs/AlGaAs quantum wells Physical Review B, 44, (20), pp. 11345-11352.

Record type: Article


The magnitude and sign of the effective magnetic splitting factor g* for conduction electrons in GaAs/AlxGa(1-x)As quantum wells have been determined as a function of well width down to 5 nm. The experimental method is based on combined measurements of the decay time of photoluminescence and of the suppression of its circular polarization under polarized optical pumping in a magnetic field perpendicular to the growth axis (Hanle effect). Measurements as a function of hole sheet density in the wells reveal a transition from excitonic behavior with very small apparent g value for low density, to larger absolute values characteristic of free electrons at higher densities. For 20-nm wells g* for electrons is close to the bulk value (-0.44), and increases for narrower wells passing through zero for well width close to 5.5 nm. A theoretical analysis based on three-band k.p theory, including allowance for conduction-band nonparabolicity and for wave-function penetration into the barriers, gives a reasonable representation of the data, leading to the conclusion that g* in quantum wells has a value close to that of electrons in the bulk at the confinement energy above the band minimum.

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Published date: 1991


Local EPrints ID: 78552
ISSN: 1550-235X
PURE UUID: 922394f9-7c18-4ebe-aba3-41c5a6e998dc

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Date deposited: 11 Mar 2010
Last modified: 18 Jul 2017 23:23

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Author: M.J. Snelling
Author: G.P. Flinn
Author: A.S. Plaut
Author: R.T. Harley
Author: A.C. Tropper
Author: R. Eccleston
Author: C.C. Phillips

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