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Magnetic g-factor of electrons in GaAs/AlGaAs quantum wells

Magnetic g-factor of electrons in GaAs/AlGaAs quantum wells
Magnetic g-factor of electrons in GaAs/AlGaAs quantum wells
The magnitude and sign of the effective magnetic splitting factor g* for conduction electrons in GaAs/AlxGa(1-x)As quantum wells have been determined as a function of well width down to 5 nm. The experimental method is based on combined measurements of the decay time of photoluminescence and of the suppression of its circular polarization under polarized optical pumping in a magnetic field perpendicular to the growth axis (Hanle effect). Measurements as a function of hole sheet density in the wells reveal a transition from excitonic behavior with very small apparent g value for low density, to larger absolute values characteristic of free electrons at higher densities. For 20-nm wells g* for electrons is close to the bulk value (-0.44), and increases for narrower wells passing through zero for well width close to 5.5 nm. A theoretical analysis based on three-band k.p theory, including allowance for conduction-band nonparabolicity and for wave-function penetration into the barriers, gives a reasonable representation of the data, leading to the conclusion that g* in quantum wells has a value close to that of electrons in the bulk at the confinement energy above the band minimum.
1550-235X
11345-11352
Snelling, M.J.
52851363-73f3-4934-a44b-77ae5f54b16a
Flinn, G.P.
a4fa86b9-2ba7-4d33-a75a-dc851166b079
Plaut, A.S.
19d23146-21cd-4830-b398-0db996f6fb04
Harley, R.T.
54613031-f60f-45f4-9b20-e49bcfd53b77
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Eccleston, R.
8aa64427-5026-455b-ac31-eb7e63a7dbaa
Phillips, C.C.
c9393825-6b62-4156-a35b-a78afdda01d3
Snelling, M.J.
52851363-73f3-4934-a44b-77ae5f54b16a
Flinn, G.P.
a4fa86b9-2ba7-4d33-a75a-dc851166b079
Plaut, A.S.
19d23146-21cd-4830-b398-0db996f6fb04
Harley, R.T.
54613031-f60f-45f4-9b20-e49bcfd53b77
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Eccleston, R.
8aa64427-5026-455b-ac31-eb7e63a7dbaa
Phillips, C.C.
c9393825-6b62-4156-a35b-a78afdda01d3

Snelling, M.J., Flinn, G.P., Plaut, A.S., Harley, R.T., Tropper, A.C., Eccleston, R. and Phillips, C.C. (1991) Magnetic g-factor of electrons in GaAs/AlGaAs quantum wells. Physical Review B, 44 (20), 11345-11352. (doi:10.1103/PhysRevB.44.11345).

Record type: Article

Abstract

The magnitude and sign of the effective magnetic splitting factor g* for conduction electrons in GaAs/AlxGa(1-x)As quantum wells have been determined as a function of well width down to 5 nm. The experimental method is based on combined measurements of the decay time of photoluminescence and of the suppression of its circular polarization under polarized optical pumping in a magnetic field perpendicular to the growth axis (Hanle effect). Measurements as a function of hole sheet density in the wells reveal a transition from excitonic behavior with very small apparent g value for low density, to larger absolute values characteristic of free electrons at higher densities. For 20-nm wells g* for electrons is close to the bulk value (-0.44), and increases for narrower wells passing through zero for well width close to 5.5 nm. A theoretical analysis based on three-band k.p theory, including allowance for conduction-band nonparabolicity and for wave-function penetration into the barriers, gives a reasonable representation of the data, leading to the conclusion that g* in quantum wells has a value close to that of electrons in the bulk at the confinement energy above the band minimum.

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Published date: 1991

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Local EPrints ID: 78552
URI: http://eprints.soton.ac.uk/id/eprint/78552
ISSN: 1550-235X
PURE UUID: 922394f9-7c18-4ebe-aba3-41c5a6e998dc

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Date deposited: 11 Mar 2010
Last modified: 29 Jan 2020 13:37

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