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Optical switching in metal tunnel-insulator n-p+ silicon devices

Optical switching in metal tunnel-insulator n-p+ silicon devices
Optical switching in metal tunnel-insulator n-p+ silicon devices
This paper considers the mechanism of optical switching and the possible utilisation of the metal tunnel-insulator n-p+ silicon device in optical communication systems. The pertinent design approaches are described. Under optical excitation, photo holes and electrons generated in the surface depletion region, or within diffusion range, will eventually be separated by the electric field and produce an increment in the forward current. Those hole-electron pairs generated in the junction region, or within diffusion range, produce a photovoltaic increase in the p+-n junction bias. Switching is induced optically, as it is electrically, by the build up of holes at the insulator-semiconductor interface. This paper employs the 1-dimensional diffusion equation to derive the light generated minority Carrier distributions and diffusion currents in the neutral n and p+ regions, together with the currents in the surface and p+-n junction depletion regions. The calculated values of both the drift and diffusion currents compare favourably with those observed experimentally.
0308-6968
85-93
Moustakas, S.
a0d04698-51f1-452b-88ff-f7a1af38ee35
Hullett, J.L.
fbc34fdd-5f12-44a1-a884-0552bc1b24ea
Calligaro, R.B.
ed6e35e5-485f-4e49-99de-109da8ba1894
Nassibian, A.G.
26d82e40-0e20-4677-8f06-634479b68b50
Payne, D.N.
4f592b24-707f-456e-b2c6-8a6f750e296d
Moustakas, S.
a0d04698-51f1-452b-88ff-f7a1af38ee35
Hullett, J.L.
fbc34fdd-5f12-44a1-a884-0552bc1b24ea
Calligaro, R.B.
ed6e35e5-485f-4e49-99de-109da8ba1894
Nassibian, A.G.
26d82e40-0e20-4677-8f06-634479b68b50
Payne, D.N.
4f592b24-707f-456e-b2c6-8a6f750e296d

Moustakas, S., Hullett, J.L., Calligaro, R.B., Nassibian, A.G. and Payne, D.N. (1979) Optical switching in metal tunnel-insulator n-p+ silicon devices. IEE Journal on Solid State and Electron Devices, 3 (4), 85-93. (doi:10.1049/ij-ssed:19790019).

Record type: Article

Abstract

This paper considers the mechanism of optical switching and the possible utilisation of the metal tunnel-insulator n-p+ silicon device in optical communication systems. The pertinent design approaches are described. Under optical excitation, photo holes and electrons generated in the surface depletion region, or within diffusion range, will eventually be separated by the electric field and produce an increment in the forward current. Those hole-electron pairs generated in the junction region, or within diffusion range, produce a photovoltaic increase in the p+-n junction bias. Switching is induced optically, as it is electrically, by the build up of holes at the insulator-semiconductor interface. This paper employs the 1-dimensional diffusion equation to derive the light generated minority Carrier distributions and diffusion currents in the neutral n and p+ regions, together with the currents in the surface and p+-n junction depletion regions. The calculated values of both the drift and diffusion currents compare favourably with those observed experimentally.

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Published date: 1979

Identifiers

Local EPrints ID: 78688
URI: https://eprints.soton.ac.uk/id/eprint/78688
ISSN: 0308-6968
PURE UUID: 34d2dcf2-9503-4d6e-b565-22e27ae00f0b

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Date deposited: 11 Mar 2010
Last modified: 29 Nov 2018 17:32

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