The University of Southampton
University of Southampton Institutional Repository

Optical switching in metal tunnel-insulator n-p+ silicon devices

Moustakas, S., Hullett, J.L., Calligaro, R.B., Nassibian, A.G. and Payne, D.N. (1979) Optical switching in metal tunnel-insulator n-p+ silicon devices IEE Journal on Solid State and Electron Devices, 3, (4), pp. 85-93.

Record type: Article

Abstract

This paper considers the mechanism of optical switching and the possible utilisation of the metal tunnel-insulator n-p+ silicon device in optical communication systems. The pertinent design approaches are described. Under optical excitation, photo holes and electrons generated in the surface depletion region, or within diffusion range, will eventually be separated by the electric field and produce an increment in the forward current. Those hole-electron pairs generated in the junction region, or within diffusion range, produce a photovoltaic increase in the p+-n junction bias. Switching is induced optically, as it is electrically, by the build up of holes at the insulator-semiconductor interface. This paper employs the 1-dimensional diffusion equation to derive the light generated minority Carrier distributions and diffusion currents in the neutral n and p+ regions, together with the currents in the surface and p+-n junction depletion regions. The calculated values of both the drift and diffusion currents compare favourably with those observed experimentally.

Full text not available from this repository.

More information

Published date: 1979

Identifiers

Local EPrints ID: 78688
URI: http://eprints.soton.ac.uk/id/eprint/78688
ISSN: 0308-6968
PURE UUID: 34d2dcf2-9503-4d6e-b565-22e27ae00f0b

Catalogue record

Date deposited: 11 Mar 2010
Last modified: 08 Oct 2017 22:34

Export record

Contributors

Author: S. Moustakas
Author: J.L. Hullett
Author: R.B. Calligaro
Author: A.G. Nassibian
Author: D.N. Payne

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×