Light well: a tuneable free-electron light source on a chip
Light well: a tuneable free-electron light source on a chip
The passage of a free-electron beam through a nanohole in a periodically layered metal-dielectric structure creates a new type of tunable, nanoscale radiation source - a "light well". In the reported demonstration, tunable light is generated at an intensity of ~200 W/cm2 as electrons with energies in the 20-40 keV range are injected into gold-silica well structures with a lateral size of just a few hundred nanometers.
113901
Adamo, G.
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MacDonald, K.F.
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Fu, Y.H.
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Wang, C.M.
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Tsai, D.P.
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García de Abajo, F.J.
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Zheludev, N.I.
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11 September 2009
Adamo, G.
73480dbd-5d3e-415a-b569-9606b3dbeecc
MacDonald, K.F.
76c84116-aad1-4973-b917-7ca63935dba5
Fu, Y.H.
dc8fa65a-7e3f-48bb-984a-286c5e471447
Wang, C.M.
98d48359-b700-4b6f-8f76-c3b5684aad1c
Tsai, D.P.
ac188460-c076-41ee-bce4-7aa873f757e3
García de Abajo, F.J.
68958b41-966f-49ef-9578-d0ffa446b33e
Zheludev, N.I.
32fb6af7-97e4-4d11-bca6-805745e40cc6
Adamo, G., MacDonald, K.F., Fu, Y.H., Wang, C.M., Tsai, D.P., García de Abajo, F.J. and Zheludev, N.I.
(2009)
Light well: a tuneable free-electron light source on a chip.
Physical Review Letters, 103 (11), .
(doi:10.1103/PhysRevLett.103.113901).
Abstract
The passage of a free-electron beam through a nanohole in a periodically layered metal-dielectric structure creates a new type of tunable, nanoscale radiation source - a "light well". In the reported demonstration, tunable light is generated at an intensity of ~200 W/cm2 as electrons with energies in the 20-40 keV range are injected into gold-silica well structures with a lateral size of just a few hundred nanometers.
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Published date: 11 September 2009
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 78865
URI: http://eprints.soton.ac.uk/id/eprint/78865
ISSN: 0031-9007
PURE UUID: 8ddc3f18-bd22-4cd6-8ab3-62186142120f
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Date deposited: 15 Mar 2010
Last modified: 14 Mar 2024 02:43
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Contributors
Author:
G. Adamo
Author:
K.F. MacDonald
Author:
Y.H. Fu
Author:
C.M. Wang
Author:
D.P. Tsai
Author:
F.J. García de Abajo
Author:
N.I. Zheludev
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