Light induced frustration of etching in Fe doped LiNbO3

Barry, I.E., Eason, R.W. and Cook, G. (1999) Light induced frustration of etching in Fe doped LiNbO3 Applied Surface Science, 143, (1-4), pp. 328-331. (doi:10.1016/S0169-4332(99)00087-2).


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We report the results of light-induced frustration of the normal etching behaviour observed when LiNbO3 is immersed in a solution of HF and HNO3 acids. Light of wavelength 488 nm, from an air-cooled 100 mW Ar ion laser, is incident on the rear surface (+z-face) of a thin Fe-doped LiNbO3 sample, whose front face (-z-face) is in contact with the etchant solution. At power densities of > 100 W /cm2, etching is suppressed through light-induced charge migration. Below this power density, partial suppression occurs, leading to submicron scale features, whose orientation follows the crystal symmetry.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1016/S0169-4332(99)00087-2
ISSNs: 0169-4332 (print)
Related URLs:
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
ePrint ID: 78936
Date :
Date Event
April 1999Published
Date Deposited: 11 Mar 2010
Last Modified: 18 Apr 2017 20:18
Further Information:Google Scholar

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