Focused ion beam etched ring-resonator in CVD-grown Ge-Sb-S thin films
Focused ion beam etched ring-resonator in CVD-grown Ge-Sb-S thin films
Focused ion beam technique has been applied to fabricate ring resonators in Ge-Sb-S thin films for optoelectronic applications. The CVD-grown Ge-Sb-S thin films have been characterized by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and UV-VIS-NIR spectroscopy and the properties of the resonator are being assessed.
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Ho, Y.-L.D.
2193ab10-62cd-4a8c-a048-01c8f169d071
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Rarity, J.G.
873cabf0-cbfa-423a-a108-868630fed99b
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
30 August 2009
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Ho, Y.-L.D.
2193ab10-62cd-4a8c-a048-01c8f169d071
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Rarity, J.G.
873cabf0-cbfa-423a-a108-868630fed99b
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, C.C., Ho, Y.-L.D., Knight, K., Rarity, J.G. and Hewak, D.W.
(2009)
Focused ion beam etched ring-resonator in CVD-grown Ge-Sb-S thin films.
CLEO Pacific Rim 2009, , Shanghai, China.
30 Aug - 03 Sep 2009.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Focused ion beam technique has been applied to fabricate ring resonators in Ge-Sb-S thin films for optoelectronic applications. The CVD-grown Ge-Sb-S thin films have been characterized by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and UV-VIS-NIR spectroscopy and the properties of the resonator are being assessed.
More information
Published date: 30 August 2009
Venue - Dates:
CLEO Pacific Rim 2009, , Shanghai, China, 2009-08-30 - 2009-09-03
Identifiers
Local EPrints ID: 78951
URI: http://eprints.soton.ac.uk/id/eprint/78951
PURE UUID: 28eb9d42-7fc9-456d-9f5b-e3848b7108d4
Catalogue record
Date deposited: 19 Mar 2010
Last modified: 14 Mar 2024 02:50
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Contributors
Author:
C.C. Huang
Author:
Y.-L.D. Ho
Author:
K. Knight
Author:
J.G. Rarity
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