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UV laser-induced poling inhibition in lithium niobate crystals

UV laser-induced poling inhibition in lithium niobate crystals
UV laser-induced poling inhibition in lithium niobate crystals
The development of methods for ferroelectric domain engineering in lithium niobate (LN) is of special importance as it not only enables the fabrication of efficient non-linear devices (PPLN) [1] but also constitutes a very effective path towards micro-structuring of this important ferroelectric crystal [2]. UV laser-induced poling inhibition is a process whereby domain inversion is prohibited as a result of previous UV laser irradiation of the crystal. The effect was first demonstrated using a frequency-doubled argon ion laser (244 nm) to irradiate the +z face of congruently melting undoped and MgO-doped LN single crystals followed by electric field poling [3]. In that initial report the potential of the method for both, ferroelectric domain engineering and micro-structuring, was demonstrated.
Ying, Y.J.
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Sones, C.L.
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Steigerwald, H.
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Johann, F.
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Soergel, E.
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Buse, K.
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Eason, R.W.
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Mailis, S.
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Ying, Y.J.
1cc13d62-ee04-4ca3-b0b8-e60a523dc145
Sones, C.L.
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Steigerwald, H.
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Johann, F.
fee21001-2a17-441f-babf-0449eb1136c5
Soergel, E.
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Buse, K.
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Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Mailis, S.
233e0768-3f8d-430e-8fdf-92e6f4f6a0c4

Ying, Y.J., Sones, C.L., Steigerwald, H., Johann, F., Soergel, E., Buse, K., Eason, R.W. and Mailis, S. (2009) UV laser-induced poling inhibition in lithium niobate crystals. Conference on Lasers and Electro-optics - European Quantum Electronics Conference (CLEO/Europe-EQEC 2009). 1 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

The development of methods for ferroelectric domain engineering in lithium niobate (LN) is of special importance as it not only enables the fabrication of efficient non-linear devices (PPLN) [1] but also constitutes a very effective path towards micro-structuring of this important ferroelectric crystal [2]. UV laser-induced poling inhibition is a process whereby domain inversion is prohibited as a result of previous UV laser irradiation of the crystal. The effect was first demonstrated using a frequency-doubled argon ion laser (244 nm) to irradiate the +z face of congruently melting undoped and MgO-doped LN single crystals followed by electric field poling [3]. In that initial report the potential of the method for both, ferroelectric domain engineering and micro-structuring, was demonstrated.

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Published date: June 2009
Venue - Dates: Conference on Lasers and Electro-optics - European Quantum Electronics Conference (CLEO/Europe-EQEC 2009), 2009-06-01

Identifiers

Local EPrints ID: 79000
URI: https://eprints.soton.ac.uk/id/eprint/79000
PURE UUID: 4ba07ce4-8d16-4f46-a715-72074b6d747e
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204
ORCID for S. Mailis: ORCID iD orcid.org/0000-0001-8100-2670

Catalogue record

Date deposited: 18 Mar 2010
Last modified: 07 Aug 2019 00:53

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