Development of a low temperature amorphous Si/Ti for integrated MEMS/NEMS
Development of a low temperature amorphous Si/Ti for integrated MEMS/NEMS
Co-sputtering techniques are used to deposit amorphous Si/Ti (a-Si/Ti) composite materials at room temperature
with a view to enabling post-CMOS fabrication of MEMS/NEMS. Electrical and mechanical properties
of a-Si/Ti are characterised and analysed, benchmarking those of polycrystalline Si (poly-Si)
commonly used for MEMS/NEMS. The surface micromachining feasibility of a-Si/Ti is preliminarily investigated
using a commonly available Si dry etching process. The promising material and process development
suggests that a-Si/Ti composites can potentially be exploited as MEMS/NEMS structural materials
with desirable post-CMOS process compatibility, leading to monolithic integration of MEMS/NEMS and
ICs.
amorphous Si/Ti, MEMS/NEMS, post-CMOS, integration
1259-1262
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Lewis, G.
61365ff8-ab4b-4204-98bb-69e8bba10fdc
Spearing, S. M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Jennett, N. M.
4a96ed5d-d364-4e9c-a8f8-8793f0e257a9
Monclus, M.
8000b709-6eb3-4381-832b-ce0568f8181d
2010
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Lewis, G.
61365ff8-ab4b-4204-98bb-69e8bba10fdc
Spearing, S. M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Jennett, N. M.
4a96ed5d-d364-4e9c-a8f8-8793f0e257a9
Monclus, M.
8000b709-6eb3-4381-832b-ce0568f8181d
Jiang, Liudi, Lewis, G., Spearing, S. M., Jennett, N. M. and Monclus, M.
(2010)
Development of a low temperature amorphous Si/Ti for integrated MEMS/NEMS.
Microelectronic Engineering, 87 (5-8), .
(doi:10.1016/j.mee.2009.11.039).
Abstract
Co-sputtering techniques are used to deposit amorphous Si/Ti (a-Si/Ti) composite materials at room temperature
with a view to enabling post-CMOS fabrication of MEMS/NEMS. Electrical and mechanical properties
of a-Si/Ti are characterised and analysed, benchmarking those of polycrystalline Si (poly-Si)
commonly used for MEMS/NEMS. The surface micromachining feasibility of a-Si/Ti is preliminarily investigated
using a commonly available Si dry etching process. The promising material and process development
suggests that a-Si/Ti composites can potentially be exploited as MEMS/NEMS structural materials
with desirable post-CMOS process compatibility, leading to monolithic integration of MEMS/NEMS and
ICs.
Text
final_publication.pdf
- Other
Restricted to Repository staff only
Request a copy
More information
Published date: 2010
Keywords:
amorphous Si/Ti, MEMS/NEMS, post-CMOS, integration
Organisations:
Engineering Mats & Surface Engineerg Gp
Identifiers
Local EPrints ID: 79895
URI: http://eprints.soton.ac.uk/id/eprint/79895
ISSN: 0167-9317
PURE UUID: cbd54376-1196-427c-b593-2d859af2485f
Catalogue record
Date deposited: 26 Mar 2010
Last modified: 14 Mar 2024 02:50
Export record
Altmetrics
Contributors
Author:
G. Lewis
Author:
N. M. Jennett
Author:
M. Monclus
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics
