Development of a low temperature amorphous Si/Ti for integrated MEMS/NEMS


Jiang, Liudi, Lewis, G., Spearing, S. M., Jennett, N. M. and Monclus, M. (2010) Development of a low temperature amorphous Si/Ti for integrated MEMS/NEMS Microelectronic Engineering, 87, (5-8), pp. 1259-1262. (doi:10.1016/j.mee.2009.11.039).

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Description/Abstract

Co-sputtering techniques are used to deposit amorphous Si/Ti (a-Si/Ti) composite materials at room temperature
with a view to enabling post-CMOS fabrication of MEMS/NEMS. Electrical and mechanical properties
of a-Si/Ti are characterised and analysed, benchmarking those of polycrystalline Si (poly-Si)
commonly used for MEMS/NEMS. The surface micromachining feasibility of a-Si/Ti is preliminarily investigated
using a commonly available Si dry etching process. The promising material and process development
suggests that a-Si/Ti composites can potentially be exploited as MEMS/NEMS structural materials
with desirable post-CMOS process compatibility, leading to monolithic integration of MEMS/NEMS and
ICs.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1016/j.mee.2009.11.039
ISSNs: 0167-9317 (print)
Keywords: amorphous Si/Ti, MEMS/NEMS, post-CMOS, integration
Subjects:

Organisations: Engineering Mats & Surface Engineerg Gp
ePrint ID: 79895
Date :
Date Event
2010Published
Date Deposited: 26 Mar 2010
Last Modified: 18 Apr 2017 20:12
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/79895

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