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Development of a low temperature amorphous Si/Ti for integrated MEMS/NEMS

Jiang, Liudi, Lewis, G., Spearing, S. M., Jennett, N. M. and Monclus, M. (2010) Development of a low temperature amorphous Si/Ti for integrated MEMS/NEMS Microelectronic Engineering, 87, (5-8), pp. 1259-1262. (doi:10.1016/j.mee.2009.11.039).

Record type: Article

Abstract

Co-sputtering techniques are used to deposit amorphous Si/Ti (a-Si/Ti) composite materials at room temperature
with a view to enabling post-CMOS fabrication of MEMS/NEMS. Electrical and mechanical properties
of a-Si/Ti are characterised and analysed, benchmarking those of polycrystalline Si (poly-Si)
commonly used for MEMS/NEMS. The surface micromachining feasibility of a-Si/Ti is preliminarily investigated
using a commonly available Si dry etching process. The promising material and process development
suggests that a-Si/Ti composites can potentially be exploited as MEMS/NEMS structural materials
with desirable post-CMOS process compatibility, leading to monolithic integration of MEMS/NEMS and
ICs.

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Published date: 2010
Keywords: amorphous Si/Ti, MEMS/NEMS, post-CMOS, integration
Organisations: Engineering Mats & Surface Engineerg Gp

Identifiers

Local EPrints ID: 79895
URI: http://eprints.soton.ac.uk/id/eprint/79895
ISSN: 0167-9317
PURE UUID: cbd54376-1196-427c-b593-2d859af2485f
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 26 Mar 2010
Last modified: 18 Jul 2017 23:15

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Contributors

Author: Liudi Jiang ORCID iD
Author: G. Lewis
Author: S. M. Spearing
Author: N. M. Jennett
Author: M. Monclus

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