Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1985

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Number of items: 17.

Article

Kotani, A., Mizuta, Hiroshi, Jo, T. and Parlebas, J. C. (1985) Theory of core photoemission spectra in CeO2 Solid State Communications, 53, pp. 805-810.

Mizuta, Hiroshi and Kotani, A. (1985) Theory of spin-polarized Auger electrons from ferromagnetic materials Journal od the Physical Society of Japan, 54, pp. 4452-4461.

Takita, K, Uchino, T, Ipposhi, T and Masuda, K (1985) LPE crystal growth and magnetophonon resonance recombination of Hg1-xMnxTe Solid State Commun., 56, p. 603.

Other

Amaratunga, G A J, Knee, N, Hart, M J and Evans, A G R (1985) Implantation and diffusion models for arsenic

Amaratunga, G A J, Sabine, K A and Evans, A G R (1985) Modelling of ion implantation in a three layer structures using the method of dose matching

Chor, E F, Ashburn, P and Brunnschweiler, A (1985) Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors

Cuthbertson, A and Ashburn, P (1985) An investigation of the trade-off between gain and base doping in polysilicon emitter bipolar transistors

Cuthbertson, A and Ashburn, P (1985) Self-aligned transistors with polysilicon emitters for bipolar VLSI

Frenc, P J and Evans, A G R (1985) Polysilicon as a strain gauge material

Frenc, P J and Evans, A G R (1985) Polysilicon as a strain gauge material

French, P J and Evans, A G R (1985) Polycrystalline Silicon Strain Sensors

French, P J and Evans, A G R (1985) Polycrystalline Silicon Strain Sensors

Hart, M J, Amaratunga, G A J and Evans, A G R (1985) Rapid thermal annealing using a > dual-pulse=scanning electron beam annealing technique

Hart, M J and Evans, A G R (1985) A Scanning Electron Beam Annealer with Electrostatic Deflection Systems

Jesshope, C R and Ashburn, P (1985) An 12L clocked gate array for undergraduate design exercises

Jorgensen, N, Barry, J C, Booker, G R, Ashburn, P, Wolstenholme, G R, Wilson, M C and Hunt, P C (1985) TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor

Sabine, K A, Amaratunga, G A J and Evans, A G R (1985) Threshold shift of NMOS transistors due to high energy source/drain implantation

This list was generated on Sat Mar 25 02:19:02 2017 GMT.