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Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1986

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Jump to: B | C | E | F | H | R | W
Number of items: 15.

B

Burgraaf, P, Parker, G J and Thompson, W (1986) Focused Beam Implanter Trends

Burgraaf, P, Parker, G J and Thompson, W (1986) Focused Beam Implanter Trends

C

Champ, P, Cowern, N E B, Godfrey, D J, Willoughby, A F and Evans, A G R (1986) A model for boron diffusion in p+, n+ and lightly doped silicon

Curtis, A R D, Redman-White, W and Nelson, P A (1986) The active control of flexural wave power flow in beams - theory

E

Evans, A G R and Farooqui, M M (1986) A Polysilicon Pressure Sensor

Evans, A G R and Farooqui, M M (1986) A polysilicon pressure sensor

F

French, P J and Evans, A G R (1986) Complete model of piezoresistance in polysilicon for strain gauge applications

French, P J and Evans, A G R (1986) The Effect of Deposition of Temperature on LPCVD Polysilicon

French, P J and Evans, A G R (1986) Polycrystalline silicon as a strain gauge material

H

Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Non equilibrium effects during RTA of Boron and Arsenic implants in silicon

Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Transient scanning electron beam annealing methods used to study diffusion and defects in implanted silicon

Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Transient scanning electron beam annealing methods used to study diffusion and defects in implanted silicon

R

Redman-White, W, Curtis, A R D and Nelson, P A (1986) The active control of flexural wave power flow in breams - experimental investigations

Resendiz-Rodriguez, F and Evans, A G R (1986) Voltage Discharge of Light Sensors in CCD Imaging Devices

W

Willoughby, A F W, Evans, A G R, Champ, P, Yallop, K J and Godfrey, D J (1986) Diffusion of Boron in heavily doped n-and p-type silicon

This list was generated on Mon Apr 10 19:37:10 2017 BST.
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