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Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1987

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Number of items: 19.

Amaratunga, G A J, Knee, N D, Hart, M J and Evans, A G R (1987) Implantation dominated unction depths of low temperature and electron beam annealed As source/drain Regions

Ashburn, P, Rezazadeh, A A, Chor, E F and Brunnschweiler, A (1987) Comparison of silicon bipolar and GaAs/GaAlAs heterojunction bipolar technologies for high-speed ECL circuits

Ashburn, P, Roulston, D J and Selvakumar, C R (1987) Comparison of experimental and computed results on arsenic and phosphorus doped polysilicon emitter bipolar transistors

Evans, A and Hall, W (1987) Programming Inequality Times Higher Educational Supplement

Farooqui, M M and Evans, A G R (1987) A polysilicon diaphragm based pressure sensor technology

French, P J and Evans, A G R (1987) Polysilicon strain sensors using shear piezoresistance.

Hall, A M and Redman-White, W (1987) A quartz crystal oscillator with current controlled frequency trimming IEEE Transactions on Circuits and Systems, CAS-34, (9), 1132 - 1133.

Hart, M J, Evans, A G R, Altrip, J L and Amaratunga, G A J (1987) Diffusion, clustering and defect assessment of CMOS source drain regions after e-beam annealing

Hart, M J, Evans, A G R, Amaratunga, G A J and Altrip, J L (1987) A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing

Hart, M J, Evans, A G R, Amaratunga, G A J and Altrip, J L (1987) A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing

Hart, M J, Evans, A G R, Amaratunga, G A J, Altrip, J L and Kijek, M (1987) Diffusion measurements and modelling of arsenic in silicon after scanning electron beam annealing

Hart, M J, Evans, A G R and Bartlett, N K (1987) A Dual Pulse Scanning Electron-Beam annealer

Mizuta, Hiroshi, Yamaguchi, K. and Takahashi, S. (1987) Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's IEEE Transactions on Electron Devices, ED-34, pp. 2027-2033.

Redman-White, W, Nelson, P A and Curtia, A R D (1987) Experiments on the active control of flexural wave power flow J Sound & Vibration, 112, (1), 187 - 191.

Takita, K, Akinaga, H, Katoh, H, Uchino, T, Ishigaki, T and Asano, H (1987) Anisotropic upper critical fields of orthorhombic single phase YBa2Cu3O7-d studied using preferentially oriented pellets Jpn. J. Appl. Phys., 26, L1323.

Takita, K, Ipposhi, T, Uchino, T, Gochou, T and Masuda, K (1987) Superconductivity transition in high-Tc Y-Ba-Cu-O mixed-phase system Jpn. J. Appl. Phys., 26, L506.

Takita, K, Uchino, T, Gochou, T and Masuda, K (1987) Magnetophonon resonance recombination with emission of two TA-phonons and impurity state in LPE- Hg1-xMnxTe Solid State Commun., 61, p. 535.

Wolstenholme, G, Jorgensen, N, Ashburn, P and Booker, G R (1987) An investigation of the thermal stability of the interfacial oxide in polysilicon emitter bipolar transistors using high resolution TEM

Yanokura, E., Mizuta, Hiroshi, Mori, M. and Takahashi, S. (1987) GaAs MESFET's fabricated by new self-alignment technology At 19th Conference on Solid State Devices and Materials. , pp 263-266.

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