Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1989
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Ashburn, P (1989) Polysilicon Emitter Technology
Ashburn, P, Rezazadeh, A A, Chor, EF and Brunnschweiler, A (1989) Comparison of silicon bipolar and GaAlAs'GaAs heterojunction bipolar technologies using a propagation delay expression
Castaner, L and Ashburn, P (1989) Vertical scalability of forward delay times in bipolar transistors
Farooqui, M M, Roberts, P TE and Evans, A G R (1989) Fabrication of polysilicon diaphragms and allied structures
French, P J and Evans, A G R (1989) Piezoresistance in polysilicon and its application to strain gauges
Hiruma, K., Mori, M., Yanakura, E., Mizuta, Hiroshi and Takahashi, S. (1989) Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy IEEE Transactions on Electron Devices, ED-36, pp. 314-318.
Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1989) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone Institute of Physics Conference Series 96, J. Harris eds., pp. 487-490.
Kusano, C., Mizuta, Hiroshi and Yamaguchi, K. (1989) The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors At 1989 American Physical Society Meeting.
Mizuta, Hiroshi, Tanoue, T. and Takahashi, S. (1989) Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes At IEEE/Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits. , pp 274-283.
Mizuta, Hiroshi, Yamaguchi, K., Yamane, M., Tanoue, T. and Takahashi, S. (1989) Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's IEEE Transactions on Electron Devices, ED-36, pp. 2307-2314.
Murray, D C, Carter, J C, Evans, A G R and Altrip, J L (1989) The effects of RHA on CMOS Devices
Murray, D C, Carter, J C, Evans, A G R and Altrip, J L (1989) The inferior quality of RTA MOSFET interfaces
Murray, D C, Evans, A G R, Altrip, J L, Carter, J C and Gougam, A (1989) An investigation into the effects of RTA processing on low frequency noise and other characteristics of CMOSFETS
Murray, D C, Siabi-Shahrivar, N, Carter, J C, Evans, A G R and Redman-White, W (1989) Increase of low frequency noise generating defects in today's CMOS/BICMOS technologies
Murray, D C, Siabi-Shahrivar, N, Evans, A G R, Carter, J C and Redman-White, W (1989) Increase of low frequency noise generating defects in todays CMOS/BICOM technologies
Murray, D C, Siabi-Shahrivar, N, Evans, A G R, Redman-White, W, Carter, J C and Altrip, J L (1989) Increased low frequency noise generating defects in today's CMOS/BICMOS technologies At European Materials Research Conference, France.
Parker, G J (1989) A Novel Triggerred Spark-Gap for High Power Xenon Flash
Post, I R C and Ashburn, P (1989) Fabrication and characgterisation of pnp polysilicon emitter bipolar transistors
Redman-White, W and Bourner, D J L (1989) Improved linearity in multi-level converters by spectral dispersion of D/A distortion products
Redman-White, W, Dunn, T R, Lucas, D R, Smithers, P A and Winchcombe, S A (1989) A radiation hard quartz oscillator
Redman-White, W, Lam, Y Y H, Bedworth, M and Bounds, D (1989) A limited connectivity switched capacitor neural processing element with digital storage of binary weighting elements
Shafi, Z A, Ashburn, P and Parker, G J (1989) Predicted propogation delay of Si/Si1-xGEx heterojunction bipolar circuits
Takita, K, Uchino, T and Masuda, K (1989) LPE crystal growth and magnetophonon resonance recombination of Hg1-x-yCdxMnyTe 5th International Conference on Narrow Gap Semiconductors and Related Materials, Maryland, USA
Uchino, T, Takita, K and Masuda, K (1989) Magnetophonon resonance recombination of heated carriers with emission of two TA-phonons in LPE-Hg1-xMnxTe J. Phys. Soc. Jpn., 58, p. 627.
Uchino, T, Takita, K and Masuda, K, Landwehr, G(ed.) (1989) Magnetophonon resonance recombination studies of Hg1-x-yCdxMnyTe using LPE crystals High magnetic fields in semiconductor physics II, Springer Series in Solid-State Sciences, p. 518.