Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1990

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Number of items: 35.

Altrip, J L, Evans, A G R, Logan, J R and Jeynes, C (1990) Towards the limit of Ion Implantation and rapid thermal annealing as a technique for shallow junction formation

Atrip, J L, Evans, A G R, Logan, J R and Jeynes, C (1990) High temperature millisecond annealing of arsenic implanted silicon

Biswas, R, Amaratunga, G A J, Evans, A G R and Roberts, P T E (1990) Parallel Computational techniques for simulating the coupled diffusion of impurities in silicon

Biswas, R, Amaratunga, G A J, Evans, A G R and Roberts, P T E (1990) Parallel Computational techniquess for simulating the coupled diffusion of impurities and defects in silicon

Brown, A D, Zwolinski, M and Redman-White, W (1990) Mixed mode simulation of oversampled A/D converters

Brown, A D, Zwolinski, M and Redman-White, W (1990) Mixed mode simulation of oversampled A/D converters

Fang, W, Brunnschweiler, A and Ashburn, P (1990) An analytical maximum toggle frequency expression and its application to optimising high-speed ECL frequency dividers

Farooqui, M M, Leong, D and Evans, A G R (1990) Silicon cantilevers with integral tips for atomic force microscopy

Goodings, C. J., Mizuta, Hiroshi, Ochiai, Y., Cleaver, J. R. A. and Ahmed, H. (1990) Fabrication of lateral superlattices on GaAs/AlGaAs heterostructures by gas-assisted focused ion beam etching At Symposium on Nanostructures: Fabrication and physics, 1990 Fall Meeting of Materials Research Society.

Howes, R, Redman-White, W, Nicols, K G, Murray, S J, Lucas, R and Mole, P J (1990) Device modelling and design techniques fdor analogue SOS circuits

Howes, R, Redman-White, W, Nicols, K G, Murray, S J and Mole, P J (1990) Modelling and simulation of silicon on Sapphire MOSFETs for analogue circuit design

Leong, K H, Ensell, G, Wall, P and Pickard, R S (1990) Multichannel microelectrode probes machined in silicon

Murray, D C, Carter, J C and Evans, A G R (1990) CMOS 1/f noise: n-channel versus p-channel

Murray, D C, Evans, A G R, Atrip, J L and Carter, J C (1990) The effects of RTA on CMOS devices

Parker, Dr G J, Shafi, Z A and Ashburn, P (1990) Predicted propagation delay on Si/Si:Ge heterojunction bipolar circuits

Parker, Dr G J and Starbuck, C M K (1990) Selective silicon epitaxial growth by LPCVD using silane

Parker, G J (1990) Thick Selective Silicon Epitaxial Growth by LPCVD from Pure Silane

Pickard, R S, Wall, P, Ubeid, M, Ensell, G and Leong, K H (1990) Recording neural activity in the honeybee brain with micromachined silicon sensors

Post, IRC and Ashburn, P (1990) Electrical method for measuring the emitter depth of shallow bipolar transistors

Potts, A, Hasko, D G, Cleaver, J R A, Smith, C G, Ahmed, H, Kelly, M J, Frost, J E F, Jones, G A C, Peacock, D C and Ritchie, D A (1990) Quantum conductivity corrections in free-standing and supported n+ GaAs wires Journal of Physics: Condensed Matter, 2, (7), pp. 1807-1815.

Potts, A, Kelly, M J, Smith, C G, Hasko, D G, Cleaver, J R A, Ahmed, H, Peacock, D C, Ritchie, D A, Frost, J E F and Jones, G A C (1990) Electron heating effects in free-standing single-crystal GaAs fine wires Journal of Physics: Condensed Matter, 2, (7), pp. 1817-1825.

Potts, A, Kelly, M J, Smith, C G, Hasko, D G, Cleaver, J R A, Ahmed, H, Peacock, D C, Ritchie, D A, Frost, J E F and Jones, G A C, (1990) Thermal transport in free-standing single-crystal GaAs wires Ahmed, H, Cleaver, J R A, Jones, G A C, McMahon, R A and Broers, A N (eds.) At Microelectronic Engineering 89, United Kingdom. 26 - 28 Sep 1989. , pp. 15-18.

Potts, A, Williams, D A, Young, R J, Blaikie, R J, McMahon, R A, Hasko, D G, Cleaver, J R A and Ahmed, H (1990) Fabrication of free-standing single-crystal silicon nanostructures for the study of thermal transport and defect scattering in low dimensional systems Japanese Journal of Applied Physics, 29, (11), pp. 2675-2679.

Redman-White, W, Dunn, R, Lucas, R and Smithers, P (1990) A radiation hard AGC stabilised SOS crystal oscillator IEEE J Solid State Circuits, 25, (1), 282 - 288.

Roulston, D J, Gold, D P, Ashburn, P and Booker, G R (1990) Study of thin oxide tunnel parameters for polysilicon emitters using computer simulation and experimental results

Shafi, Z A and Ashburn, P (1990) Silicon based pseudo-heterojunction bipolar transistors

Shafi, Z A, Ashburn, P and Parker, G J (1990) Predicted propagation delay of Si'SiGe heterojunction bipolar ECL circuits

Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Post, I (1990) Low frequency noise performance of NPN/PNP polysilicon emitter bipolar transistors

Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Post, I (1990) Modelling and characterisation of noise of polysilicon emitter bipolar transistors

Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Post, I (1990) Modelling and characterisation of noise of polysilicon emitter bipolar transistors

Siabi-Shahrivar, N., Redman-White, W., Ashburn, P. and Post, I. (1990) Low frequency noise of NPN/PNP polysilicon emitter bipolar transistors At European Solid State Device Research Conference.

Takita, K, Uchino, T and Masuda, K (1990) LPE crystal growth and magnetophonon resonance recombination of Hg1-x-yCdxMnyTe Semicond. Sci. Technol., 5, S277.

Tanoue, T. and Mizuta, Hiroshi (1990) Multiple-well RTD with InGaAs strained quantum wells At Advanced Heterostructure Device Workshop.

Usagawa, T., Rabinzohn, P. D., Mizuta, Hiroshi, Hiruma, K., Kawata, M. and Yamaguchi, K. (1990) Comprehensive analysis of bifunctional 2DEG-HBTs At 22nd Conference on Solid State Devices and Materials. , pp 59-62.

Williams, J D, Ashburn, P, Moisewitsch, N E, Gold, D P, Whitehurst, J, Booker, G R and Wolstenholme, G R (1990) Epitaxial regrowth in double-diffused polysilicon emitters

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