Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1991

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Number of items: 39.

Afshar-Hanaee, N, Bonar, J M, Evans, A G R, Starbuck, C M K, Parker, G J and Kemhadjian, H A (1991) Thick selective epitaxial growth of silicon at 960 deg C using silane only

Afshar-Nanaii, N, Bonar, J M, Evans, A G R, Parker, G J and Starbuck, C M K (1991) Thick selective expitaxial growth of silicon at 960oC using silane only

Altrip, J L, Evans, A G R, Young, N D and Logan, J R (1991) The nature of Electrically inactive implanted arsenic in Silicon after rapid thermal annealing

Brown, A D and Redman-White, W, (1991) Bipolar analogue circuits Brown, A D (ed.) In Circuits and systems on silicon. McGraw-Hill,London., 80 - 98.

Carter, J C and Evans, A G R (1991) Delineation of junctions using secco and period etches

Castaner, L M, Ashburn, P and Wolstenholme, G R (1991) Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors

Durham, A M, Redman-White, W and Hughes, J B (1991) Digitally tunable continuous-time filters with high signal linearity

Durham, A M, Redman-White, W and Hughes, J B (1991) Low distortion VLSI compatible self-tuned continuous time monolithic filters

Evans, A G R (1991) Design rules, verification and scaling

Evans, A G R (1991) MOS processes: A D Brown ed.

Farooqui, M M and Evans, A G R (1991) Polysilicon Microstructures

Farooqui, M M and Evans, A G R (1991) Polysilicon Microstructures

Farooqui, M M, Evans, A G R, Stedman, M and Haycocks, J A (1991) Cantilevers with integral tips for atomic force microscopy

Farooqui, M M, Evans, A G R, Stedman, M and Haycocks, J A (1991) Micromachined sensors for atomic force microscopy

Ho, S., Mizuta, Hiroshi and Yamaguchi, K. (1991) Effects of reservoirs on tunneling and interference in mesoscopic systems At Condensed Matter and Material Physics Conference 1991.

Hockley, M, Tuppen, C G, Gibbings, C J, Shafi, Z A and Ashburn, P (1991) TEM study of strain relaxation processes in metastable Si/SiGe/Si structures for heterojunction bipolar transistors

Howes, R and Redman-White, W (1991) Frequency dependent small-signal drain characteristics in silcon-on-sapphire MOSFETs

Howes, R and Redman-White, W (1991) Measurement and analysis of small-signal drain admittance in SOS MOSFETs Electronics Letters, 27, (24), pp. 2290-2292.

Howes, R, Redman-White, W, Nicols, K G, Bird, S, Robinson, M and Mole, P J (1991) A charge conserving SOS MOSFET model including radiation effects for circuit simulation

Howes, R, Redman-White, W, Nicols, K G, Murray, S, Robinson, M and Mole, P (1991) A charge conserving silicon-on-sapphire SPICE MOSFET model for analogue design

Howes, R, Redman-White, W, Nicols, K G, Robinson, M, Kerr, J and Mole, P J (1991) A SOS MOSFET SPICE model for confident analogue design

Mizuta, Hiroshi and Goodings, C. J. (1991) Density matrix calculations of femtosecond electron dynamics in resonant tunnelling diodes At 11th general conference of the condensed matter division of European Physical Society.

Mizuta, Hiroshi and Goodings, C. J. (1991) Transient quantum transport simulation based on the statistical density matrix Journal of Physics: Condensed Matter, 3, pp. 3739-3756.

Mizuta, Hiroshi and Goodings, C. J. (1991) Transient quantum transport simulation based on the statistical density matrix At Institute of Physics semiconductor group meeting.

Murray, D C, Carter, J C, Afshar-Hanaii, N, Evans, A G R, Taylor, S, Zhang, J and Eccleson, W (1991) Noise and other electrical characteristics of CMOSFETS fabricated with furnafe, anodic and rapid thermal oxides

Murray, D C, Evans, A G R and Carter, J C (1991) Shallow defects responsible for G-R noise in MOSFETS

Nanba, M, Kobayashi, T, Uchino, T, Nakamura, T, Kondo, M, Tamaki, Y, Iijima, S, Kure, T and Tanabe, M (1991) A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology IEDM Tech. Digest, p. 443.

Parker, G J, Bonar, J M and Starbuck, C M K (1991) Long incubation times for selective epitaxal growth of silicon using silane only

Parker, G J and Starbuck, C M K (1991) A New Semiconductor Depisition System

Post, I R C and Ashburn, Peter (1991) Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions

Potts, A., Kelly, M. J., Hasko, D. G., Smith, C. G., Cleaver, J. R. A., Ahmed, H., Peacock, D. C., Frost, J. E. F., Ritchie, D. A., Jones, G. A. C., Singleton, J. and Janssen, T. J. B. M. (1991) Thermal transport in free-standing semiconductor fine wires Superlattices and Microstructures, 9, (3), pp. 315-318.

Rabinzohn, P. D., Usagawa, T., Mizuta, Hiroshi and Yamaguchi, K. (1991) The new two-dimensional electron gas base HBT (2DEG-HBT): Two-dimensional numerical simulation IEEE Transactions on Electron Devices, ED-38, pp. 222-231.

Redman-White, W and Durham, A M (1991) A fourth order converter with self-tuning continuous time noise shaper

Redman-White, W. (1991) CMOS analogue circuits In, Brown, A. (eds.) Circuits and Systems in Silicon. McGraw-Hill, London pp. 124-142.

Shafi, Z A, Gibbings, C J, Ashburn, P, Post, I R C, Tuppen, C G and Godfrey, D J (1991) The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors

Shafi, Z A, Martin, A S R, Ashburn, P, Godfrey, D J, Gibbings, C, Post, I R C, Tuppen, C and Jones, M E (1991) Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors

Shafi, Z A, Post, I R C, Whitehurst, J, Wensley, P, Ashburn, P, Moynagh, P B and Booker, G R (1991) Poly-crystalline silicon-carbide (SiCarb) emitter bipolar transistors

Starbuck, C M K and Parker, G J (1991) A New Semiconductor Deposition System

Tomlinson, R D, Hill, A E., Imaniah, M, Pilkington, R D, Slifkin, M and Bagnall, D M (1991) Changes in the opto-electronic properties of CuInSe2 following ion implantation

This list was generated on Wed Apr 12 14:59:07 2017 BST.