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Items where Division is "Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO" and Year is 1993

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Number of items: 43.

Afshar-Hanaii, N, Peerlings, J, Evans, A G R and Carter, J C (1993) Improved hot electron degradation in nMOSFETs with elevated source and drain structures realised by SEG of silicon using silane only

Afshar-Nanaii, N, Peerlings, J, Evans, A G R and Carter, J C (1993) Reduction of hot-electron degradation in NMOSFETS with elevated sources and drains realised by SEG of silicon using silane only

Ashburn, P, Shafi, Z A, Post, I R C and Gregory, H J (1993) SiGe heterojunction bipolar transistors: the future jof silicon bipolar technology or not?

Bracey, M, Tijou, J, Hopwood, C, Murray, B and Redman-White, W (1993) An analogue CMOS front-end for terrestrial and satellite MAC decoding

Carter, J C, Evans, A G R and Throngnumchai, K (1993) Using the metal-oxide polysilicon-silicon (MOPS) structure to determine LPCVD polysilicon quality

Carter, J C, Evans, A G R and Throngnumchai, K (1993) Using the metal-oxide polysilicon-silicon (MOPS) structure to determine LPCVD polysilicon quality

Chan, K K, Amaratunga, G A J, Shafi, Z A, Ashburn, P and Wong, S P (1993) Bipolar transistor action from an amorphous carbon/silicon heterojunction emitter

Chan, Q, Willander, M, Carter, J, Thanki, H and Evans, A G R (1993) Fabrication and performance of delta-doped Si n-MESFET grown by MBE

Duram, A M and Redman-White, W (1993) Integrated continuous-time balanced filters for 16-bit DSP interfaces IEEE Journal of Solid State Circuits, 28, (7), 835 - 839.

Durham, A M and Redman-White, W (1993) A very high linearity tunable PTA in 5V CMOS IEE Proceedings Part G, 140, (3), 207 - 210.

Ensell, G, Evans, A G R, Farooqui, M M, Haycocks, J A and Stedman, M (1993) Nanometrological Micromachined Artefacts

Ensell, G, Evans, A G R, Farooqui, M M, Kemhadjian, H A and Smith, J G (1993) Micromechanics at Southampton

Ensell, G J (1993) Cutting out cataract problems

Ensell, G J, Banks, D, Balachandran, W and Ewins, D (1993) A thin film microelectrode fabrication process

Ensell, G J, Evans, A G R, Farooqui, M M, Kemhadjian, H A and Smith, J G (1993) Microengineering at Southampton

Evans, A G R (1993) Nanotechnology and Electronics

Evans, A G R (1993) Nanotechnology and Electronics

Evans, A G R (1993) Silicon Micromachining and fabrication

Farooqui, M M and Evans, Alan G R (1993) Silicon sensors with integral tips for atomic force microscopy: a novel single-mask fabrication process

Goodings, C., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1993) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates At The 10th International Conference on Electronic Properties of Two-Dimensional Systems.

Gregory, H J, Mouis, M, Mathiot, D, Robbins, D J, Glasper, J, Ashburn, P and Nigrin, S (1993) Modelling of anomalous boron diffusion in Si'SiGe HBTs

Harris, R, Ensell, G J and Brunnschweiler, A (1993) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 0.1MGy capability

Ho, S., Moriyoshi, A., Ohbu, I., Kagaya, O., Mizuta, Hiroshi and Yamaguchi, K. (1993) Theoretical analysis of transconductance enhancement due to electron concentration dependent screening in heavily doped systems At Int. Workshop on VLSI Process and Device Modeling, Nara.

Ho, S., Oohira, M., Kagoya, O., Moriyoshi, A., Mizuta, Hiroshi and Yamaguchi, K. (1993) Dynamic simulation of multiple trapping processes and anomalous frequency dependence in GaAs MESFETs At Int. Workshop on VLSI Process and Device Modeling.

Hughes, J. and Redman-White, W. (1993) Switched-current limitations and non-ideal behaviour In, Toumazou, C., Hughes, J.B. and Battersby, N.C. (eds.) Switched-Currents: An Analogue Technique for Digital Technology. London, GB, IEEE pp. 71-135. (Circuits and Systems, 5).

Lee, M S L, Redman-White, W, Tenbroek, B M and Robinson, M (1993) Modelling of thin film SOI devices for circuit simulation including per-instance dynamic self heating

Moiseiwitsch, N E and Ashburn, P (1993) Optimisation of BF2 implanted pnp polysilicon emitter bipolar transistors using rapid thermal annealing

Mouis, M., Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L, Selberherr, S, Stippel, H and Strasser, E (eds.) (1993) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors

Nanba, M, Uchino, T, Kondo, M, Nakamura, T, Kobayashi, T, Tamaki, Y and Tanabe, M (1993) A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts IEEE Trans. Electron Devices, 40, p. 1563.

Ohbu, I., Takahama, M. and Mizuta, Hiroshi (1993) Time dependence of the surface Fermi level of GaAs in atomosphere Applied Physics Letters, 62, pp. 3279-3281.

Post, I R C, Ashburn, P, Williams, J D, Moiseiwitsch, N E and Jerome, R C (1993) Polysilicon emitter bipolar transistors fabricated by rapid thermal processing

Redman-White, W, Bracey, M, Tijou, J and Barth, P J (1993) A frequency selective clamp for satellite video applications

Redman-White, W, Lee, M S L, Tenbroek, B M, Uren, M J and Bunyan, R J T (1993) Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements IEE Electronic Letters, 29, (13), pp. 1180-1181.

Redman-White, W, Lee, M S L, Uren, M J and Tenbroek, B M (1993) Characterisation and modelling of circuit level electrical and thermal behaviour of SOI MOSFETs

Routley, P, Brunnschweiler, A and Ashburn, P (1993) The application of a multi variable optimiser to the design of CMOS buffers

Tenbroek, B M, Redman-White, W, Uren, M J, Lee, M S L and Ward, M C L (1993) Identification of thermal and electrical time constants in SOI MOSFETs from small signal measurements

Uchino, T, Shiba, T, Kikuchi, T, Tamaki, Y, Watanabe, A, Kiyota, Y and Honda, M (1993) 15-ps ECL/74-GHz Si bipolar technology IEDM Tech. Digest, p. 67.

Wagner, M. and Mizuta, Hiroshi (1993) Coherent-electron intrinxic multistability in a double-barrier tunnelling diode Applied Physics Letters, 63, pp. 2268-2270.

Wagner, M. and Mizuta, Hiroshi (1993) Complex-energy analysis of intrinsic lifetimes of resonances in biased multiple quantum wells Physical Review B, 48, pp. 14393-14406.

Wagner, M. and Mizuta, Hiroshi (1993) Multistable charge build-up and a new switching principle in coherent-electron tunneling devices Japanese Journal of Applied Physics, 32, L520-L523.

Wegerif, S and Redman-White, W (1993) An integrated CMOS image-rejection mixer system for low-jitter secondary frequency references

Zegadi, A, Bagnall, D M, Belattar, A, Pilkington, R D, Slifkin, M A, Hill, A E and Tomlinson, R D (1993) Photoacoustic spectroscopy of CuInSe2 thin films

Zhang, J R, Wilson, R J, Hemment, P L F, Claverie, A, Cristiano, F, Salles, P, Wen, J Q, Evans, J H, Peaker, A R and Parker, G J (1993) Regrowth Behaviour of SiGe/Si SDtructures Formed by Ge+ Ion Implantation and Post Amorphisation

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