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Analysis of SiGe heterojunction integrated injection logic structures using a charge stored model

Analysis of SiGe heterojunction integrated injection logic structures using a charge stored model
Analysis of SiGe heterojunction integrated injection logic structures using a charge stored model
A quasi two-dimensional stored charge model is developed as an aid to the optimisation of SiGe Integrated Injection Logic (I2L) circuits. The model is structure-based and partitions the stored charge between the different regions of the I2L gate. Both the NpN switching transistor and the PNp load transistor are correctly modelled and the effects of series resistances on the gate operation are taken into account. The model is applied to surface-fed and substrate-fed variants of SiGe I2L and the Ge and doping concentrations varied to determine the important trade-offs in the gate design. At low injector currents, the substrate-fed variant is found to be faster because of lower values of critical depletion capacitances. At high injector currents, the performance of both variants is limited by series resistances, particularly in the NpN emitter layer. The inclusion of 16% Ge in the substrate-fed I2L gate leads to a decrease in the dominant stored charge by a factor of more than ten, which suggests that gate delays well below 100ps should be achievable in SiGe I2L even at a geometry of 3mm. The model is applied to a realistic, self-aligned structure and a delay of 60 ps is predicted. It is expected that this performance can be improved with a fully optimised, scaled structure.
2437-2447
Wainwright, S P
25ae69d5-c5fc-46b2-8a8e-e7cdd73c0c84
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Lamb, A C
89571b4c-7c59-47e8-9325-e85e0d70a407
Wainwright, S P
25ae69d5-c5fc-46b2-8a8e-e7cdd73c0c84
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Lamb, A C
89571b4c-7c59-47e8-9325-e85e0d70a407

Wainwright, S P, Hall, S, Ashburn, P and Lamb, A C (1998) Analysis of SiGe heterojunction integrated injection logic structures using a charge stored model. IEEE Transactions on Electron Devices, 45, 2437-2447.

Record type: Article

Abstract

A quasi two-dimensional stored charge model is developed as an aid to the optimisation of SiGe Integrated Injection Logic (I2L) circuits. The model is structure-based and partitions the stored charge between the different regions of the I2L gate. Both the NpN switching transistor and the PNp load transistor are correctly modelled and the effects of series resistances on the gate operation are taken into account. The model is applied to surface-fed and substrate-fed variants of SiGe I2L and the Ge and doping concentrations varied to determine the important trade-offs in the gate design. At low injector currents, the substrate-fed variant is found to be faster because of lower values of critical depletion capacitances. At high injector currents, the performance of both variants is limited by series resistances, particularly in the NpN emitter layer. The inclusion of 16% Ge in the substrate-fed I2L gate leads to a decrease in the dominant stored charge by a factor of more than ten, which suggests that gate delays well below 100ps should be achievable in SiGe I2L even at a geometry of 3mm. The model is applied to a realistic, self-aligned structure and a delay of 60 ps is predicted. It is expected that this performance can be improved with a fully optimised, scaled structure.

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Published date: 1998
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250918
URI: http://eprints.soton.ac.uk/id/eprint/250918
PURE UUID: 06a729b5-e5de-4b37-a87e-8054a16a95ab

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Date deposited: 06 Jan 2004
Last modified: 14 Mar 2024 05:06

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Contributors

Author: S P Wainwright
Author: S Hall
Author: P Ashburn
Author: A C Lamb

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