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Behaviour and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers

Behaviour and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers
Behaviour and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers
A comprehensive study is made of the behaviour and effects of fluorine in n+ polysilicon layers. Sheet resistance, TEM and SIMS are used to obtain quantitative data for the breakup of the interfacial oxide, the epitaxial regrowth of the polysilicon and the fluorine and arsenic distributions. The fluorine significantly increases both the initial oxide breakup and the initial polysilicon regrowth. It also produces inclusions in the layer which can affect the subsequent polysilicon regrowth and the arsenic distributions. Three regrowth stages and two regrowth mechanisms are distinguished and interpreted and a value of approximately 6x1011cm2s-1 is deduced for the effective diffusivity of fluorine in polysilicon at 950°C.
0021-8979
7567-7578
Marsh, C.D.
bbae42bc-5d2b-42b6-9fff-37104b120b35
Moiseiwitsch, N.E.
bd8e1bd2-b7f3-43d9-8b02-f7972bda9e42
Booker, G.R.
14a40fe3-236c-4bf4-b932-cf90ed6404b2
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Marsh, C.D.
bbae42bc-5d2b-42b6-9fff-37104b120b35
Moiseiwitsch, N.E.
bd8e1bd2-b7f3-43d9-8b02-f7972bda9e42
Booker, G.R.
14a40fe3-236c-4bf4-b932-cf90ed6404b2
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Marsh, C.D., Moiseiwitsch, N.E., Booker, G.R. and Ashburn, P. (2000) Behaviour and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers. Journal of Applied Physics, 87 (10), 7567-7578.

Record type: Article

Abstract

A comprehensive study is made of the behaviour and effects of fluorine in n+ polysilicon layers. Sheet resistance, TEM and SIMS are used to obtain quantitative data for the breakup of the interfacial oxide, the epitaxial regrowth of the polysilicon and the fluorine and arsenic distributions. The fluorine significantly increases both the initial oxide breakup and the initial polysilicon regrowth. It also produces inclusions in the layer which can affect the subsequent polysilicon regrowth and the arsenic distributions. Three regrowth stages and two regrowth mechanisms are distinguished and interpreted and a value of approximately 6x1011cm2s-1 is deduced for the effective diffusivity of fluorine in polysilicon at 950°C.

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More information

Published date: 2000
Additional Information: Organisation: American Institute of Physics
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 253692
URI: http://eprints.soton.ac.uk/id/eprint/253692
ISSN: 0021-8979
PURE UUID: e24240f4-9971-4108-a88b-106bbf44b795

Catalogue record

Date deposited: 06 Jan 2004
Last modified: 14 Mar 2024 05:28

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Contributors

Author: C.D. Marsh
Author: N.E. Moiseiwitsch
Author: G.R. Booker
Author: P. Ashburn

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